Memory system and memory device
According to one embodiment, a memory system comprises a memory array, a first ECC control circuit, and a second ECC control circuit. The memory cell array stores data, a first parity generated in association with the data based on a first error correction code (ECC) scheme, and a second parity generated in association with the data and the first parity based on a second error correction code (ECC) scheme. The first ECC control circuit executes error correction using the first ECC scheme and the first parity during a read operation on the memory cell array. The second ECC control circuit executes error correction using the second ECC scheme and the second parity during a scrub operation on the memory cell array. The first ECC scheme and the second ECC scheme have error correction capabilities of different levels.
1. A memory system comprising:
a memory cell array configured to store data, a first parity generated in association with the data based on a first error correction code (ECC) scheme, and a second parity generated in association with the data and the first parity based on a second error correction code (ECC) scheme;
a first ECC control circuit configured to execute a first error correction using the first ECC scheme and the first parity during a read operation on the memory cell array;
a second ECC control circuit configured to execute a second error correction using the second ECC scheme and the second parity during a scrub operation on the memory cell array; and
a register in which a range of addresses is registered within which an error uncorrectable by the first error correction with the first ECC control circuit has occurred,
wherein the first ECC scheme and the second ECC scheme have error correction capabilities of different levels, and
wherein the second ECC control circuit executes the second error correction so as to give priority to the range indicated by the registered addresses.
2. The memory system according to claim 1 , wherein the first ECC control circuit and the second ECC control circuit execute error correction in different ranges in the memory cell array.
3. The memory system according to claim 1 , wherein the data and the first parity are stored in an identical bank in the memory cell array and in a page with an identical row address, and
wherein the second parity is distributively stored in a plurality of banks in the memory cell array or in a plurality of chips.
4. The memory system according to claim 1 , wherein the memory cell array further stores a scrub flag that indicates invalidity of the second parity in response to rewrite of at least one of the data and the first parity.
5. The memory system according to claim 1 , wherein, upon externally receiving a refresh command, the second ECC control circuit performs the scrub operation.
6. The memory system according to claim 1 , wherein the memory cell array is mounted on a first semiconductor chip, and
wherein the first ECC control circuit and the second ECC control circuit are mounted on a second semiconductor chip different from the first semiconductor chip.
7. A memory device comprising:
a memory cell array configured to store data, a first parity generated in association with the data based on a first error correction code (ECC) scheme, and a second parity generated in association with the data and the first parity based on a second error correction code (ECC) scheme;
a first ECC control circuit configured to execute a first error correction using the first ECC scheme and the first parity during a read operation on the memory cell array;
an error detection circuit configured to execute error detection using the second ECC scheme when an error occurs which is uncorrectable by the first error correction with the first ECC control circuit; and
a register in which a range of addresses indicating the error detected by the error detection circuit is registered, the registered addresses being used in executing a second error correction during a scrub operation on the memory cell array,
wherein the first ECC scheme and the second ECC scheme have error correction capabilities of different levels.
8. The memory device according to claim 7 , wherein the first parity and the second parity are used to execute error correction in different ranges in the memory cell array.
9. The memory device according to claim 7 , wherein the data and the first parity are stored in an identical bank in the memory cell array and in a page with an identical row address, and
wherein the second parity is distributively stored in a plurality of banks in the memory cell array.
10. The memory device according to claim 7 , further comprising a scrub control circuit configured to preferentially read the range indicated by the addresses from the memory cell array and to output a result of the read, during the scrub operation.