Semiconductor device and manufacturing method thereof
View Patent ↗A semiconductor device includes a first wiring comprising a first conductive material on a semiconductor layer, a second wiring comprising the first conductive material on the semiconductor layer, a third wiring comprising a second conductive material different from the first conductive material, and an insulation film on the semiconductor layer between the first wiring and the second wiring and between the second wiring and the third wiring. The second wiring is provided on at least two sides of the third wiring, and a mean free path of free electrons in the first conductive material is shorter than a mean free path of free electrons in the second conductive material, or the first conductive material shows quantized conduction and the second conductive material does not show quantized conduction. The first wiring, the second wiring, the third wiring, and the insulation film are in one wiring layer provided on the semiconductor layer.
1. A semiconductor device comprising:
a first wiring comprising a first conductive material on a semiconductor layer;
a second wiring comprising the first conductive material on the semiconductor layer;
a third wiring comprising a second conductive material different from the first conductive material; and
an insulation film on the semiconductor layer between the first wiring and the second wiring and between the second wiring and the third wiring, wherein
the second wiring is provided on at least two sides of the third wiring,
a mean free path of free electrons in the first conductive material is shorter than a mean free path of free electrons in the second conductive material, or the first conductive material shows quantized conduction and the second conductive material does not show quantized conduction, and
the first wiring, the second wiring, the third wiring, and the insulation film are in one wiring layer provided on the semiconductor layer.
2. The semiconductor device according to claim 1 , wherein width of the third wiring in a direction along the semiconductor layer is greater than a width of the first wiring in the direction along the semiconductor layer and a width of the second wiring in the direction along the semiconductor layer.
3. The device according to claim 1 , wherein the first conductive material comprises a first metal selected from a group consisting of Rh, Mo, Al, Ru, Cd, W, Ir, Zn, Ga, Pt, Pd, Nb, In, Co, Ni, Cr, Tc, Os, Ta, Fe, Sn, Tl, and Re.
4. The device according to claim 3 , wherein the first conductive material is one of the first metal, a first alloy including the first metal as a main component, a silicide of first metal, and a silicide of an alloy including the first metal as a main component.
5. The device according to claim 3 , wherein the second conductive material comprises a second metal selected from a group consisting of Cu and Al.
6. The device according to claim 5 , wherein the second conductive material is one of the second metal or a second alloy which includes the second metal as a main component.
7. The device according to claim 1 , wherein the first conductive material is graphene.
8. The semiconductor device according to claim 1 , wherein the second wiring encircles the third wiring in a plane parallel to the semiconductor layer.
9. The semiconductor device according to claim 1 , wherein a distance between the second and third wirings in any direction parallel to the semiconductor layer is constant.
10. The semiconductor device according to claim 1 , wherein the second wiring is not provided on the semiconductor layer between an end portion of the third wiring and the first wiring.
11. The semiconductor device according to claim 1 , wherein the first wiring is a stacked structure including a first layer of the first conductive material and a second layer of a material that is different from the first conductive material.
12. The semiconductor device according to claim 11 , wherein the second layer is a silicon film, a silicon oxide film, or a silicon nitride film.
13. The semiconductor device according to claim 1 , wherein the second wiring has a floating potential and is not electrically connected to either of the first and third wirings.
14. The semiconductor device according to claim 1 , wherein
the second wiring is intermittently provided on the semiconductor layer in parallel with a first direction along which the third wiring extends longitudinally, and
a second width of the third wiring, in a second direction crossing the first direction, at a position along the first direction at which the second wiring is not present is greater than a first width of the third wiring, in the second direction, at a position along the first direction at the second wiring is present.
15. The semiconductor device according to claim 1 , further comprising:
a contact wiring electrically connecting the first wiring and the third wiring.
16. The semiconductor device according to claim 1 , wherein
the first wiring is in a memory cell region of a NAND-type flash memory, and
the second wiring and the third wiring are in a peripheral circuit region of the NAND-type flash memory.
17. A method for manufacturing a semiconductor device, comprising:
forming a first wiring and a second wiring on a semiconductor layer, the first and second wiring each comprising a first conductive material;
forming an insulation film on the semiconductor layer and between the first wiring and the second wiring; and
forming a third wiring on the semiconductor layer, the third wiring comprising a second conductive material different from the first conductive material, wherein
the second wiring is provided on at least two sides of the third wiring,
the insulating film is between the second and third wirings,
a mean free path of free electrons in the first conductive material is shorter than a mean free path of free electrons in the second conductive material, or the first conductive material shows quantized conduction and the second conductive material does not show quantized conduction, and
the first wiring, the second wiring, the third wiring, and the insulation film are each a same distance from the semiconductor layer in a direction orthogonal to a surface of the semiconductor layer.
18. The method according to claim 17 , wherein the insulation film is formed with using a chemical vapor deposition (CVD) method, and the insulation film is anisotropically etched to form an opening in the insulation film for forming the third wiring.
19. The method according to claim 17 , wherein the first and second wirings are formed in one lithographic process, the insulation film is deposited as a conformal film on the first and second wirings, and the third wiring is formed on the semiconductor layer in an opening formed in the insulation film between different portions of the second wiring by a reactive ion etching (RIE) process.
20. The method of claim 17 , wherein
the first conductive material comprises a first metal selected from a group consisting of Rh, Mo, Al, Ru, Cd, W, Ir, Zn, Ga, Pt, Pd, Nb, In, Co, Ni, Cr, Tc, Os, Ta, Fe, Sn, Tl, and Re; and
the second conductive material comprises a second metal selected from a group consisting of Cu.