IP Library Granted Patent US 10,192,889
Granted Patent B2
US 10,192,889 · App. 15/053,483 · Granted Jan 29, 2019

Display device and method of manufacturing a display device

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Quick Facts
Patent No.
US 10,192,889
App. No.
15/053,483
Granted
Jan 29, 2019
Kind
B2
Abstract

A display device includes a first substrate including a display area and a non-display area. A gate line and a gate electrode are in the display area. A data line is connected to the gate line. A gate insulating layer is on the gate line and the gate electrode. A semiconductor layer is on the gate insulating layer. A drain electrode and a source electrode are on the semiconductor layer. A first passivation layer is on the drain electrode and the source electrode. A color filter is on the first passivation layer. A common electrode is on the first passivation layer. A second passivation layer is on the common electrode. A pixel electrode is on the second passivation layer. The gate insulating layer has substantially a same shape as a shape of the gate electrode. The gate insulating layer has a width wider than a width of the gate electrode.

Claims (50)

1. A display device comprising:

a first substrate including a display area and a non-display area;

a gate line and a gate electrode in the display area;

a data line connected to the gate line;

a gate insulating layer on the gate line and the gate electrode;

a semiconductor layer on the gate insulating layer;

a drain electrode and a source electrode on the semiconductor layer;

a first passivation layer on the drain electrode and the source electrode;

a color filter on the first passivation layer;

a common electrode on the first passivation layer;

a second passivation layer on the common electrode; and

a pixel electrode on the second passivation layer,

wherein the gate insulating layer has substantially a same shape as a shape of the gate electrode,

wherein the gate insulating layer has a width wider than a width of the gate electrode,

wherein the gate insulating layer is spaced apart from the first substrate, and

wherein a side surface of the gate electrode is exposed below a bottom surface of the gate insulating layer.

2. The display device of claim 1 , wherein one of the drain electrode and the source electrode contacts an end portion of the gate insulating layer.

3. The display device of claim 2 , wherein one of the drain electrode and the source electrode is spaced apart from an end portion of the gate electrode.

4. The display device of claim 3 , wherein the width of the gate insulating layer is in a range of about 0.2 μm to about 4 μm wider than the width of the gate electrode.

5. The display device of claim 4 , wherein the pixel electrode is connected to the semiconductor layer.

6. The display device of claim 5 , wherein the pixel electrode comprises a plurality of cut-out portions, and wherein the common electrode has a planar shape.

7. The display device of claim 6 , further comprising an overcoat layer between the color filter and the common electrode.

8. The display device of claim 7 , further comprising:

a second substrate disposed opposite the first substrate; and

a liquid crystal layer between the first substrate and the second substrate.

9. The display device of claim 8 , wherein the semiconductor layer comprises at least one selected from amorphous silicon, polysilicon, and an oxide semiconductor.

10. The display device of claim 1 , further comprising:

a first pad electrode on the non-display area;

a pad electrode insulating layer on the first pad electrode, the pad electrode insulating layer having a contact hole through which a portion of the first pad electrode is exposed;

a third passivation layer on the pad electrode insulating layer; and

a second pad electrode on the first pad electrode and the third passivation layer,

wherein the pad electrode insulating layer has substantially a same shape as a shape of the first pad electrode, and wherein the pad electrode insulating layer has a width wider than a width of the first pad electrode.

11. The display device of claim 10 , wherein the width of the pad electrode insulating layer is in a range of about 0.2 μm to about 4 μm wider than the width of the first pad electrode.

12. The display device of claim 1 , wherein the gate insulating layer is positioned entirely above the gate electrode.

13. A display device comprising:

a first substrate including a display area and a non-display area;

a gate line and a gate electrode in the display area;

a data line connected to the gate line;

a gate insulating layer on the gate line and the gate electrode;

a semiconductor layer on the gate insulating layer;

a drain electrode and a source electrode on the semiconductor layer;

a first passivation layer on the drain electrode and the source electrode;

a color filter on the first passivation layer;

a common electrode on the first passivation layer;

a second passivation layer on the common electrode; and

a pixel electrode on the second passivation layer,

wherein the gate insulating layer has substantially a same shape as a shape of the gate electrode,

wherein the gate insulating layer has a width wider than a width of the gate electrode,

wherein the first substrate, the gate electrode, the gate insulating layer and the drain electrode define a space, and

wherein a side surface of the gate electrode is exposed below a bottom surface of the gate insulating layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 21, 2022
From: SAMSUNG DISPLAY CO., LTD.
To: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
Reel/Frame 060778/0543 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2016
From: KIM, JISUN; CHAI, CHONGCHUL
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 037830/0228 →