Method for producing a conversion lamina and conversion lamina
View Patent ↗A method for producing at least one conversion lamina for a radiation-emitting semiconductor component is specified. A base material including a conversion substance contained therein is applied to a substrate by means of a double-layered stencil. Furthermore, a conversion lamina for a radiation-emitting semiconductor component includes a base material and a conversion substance embedded therein. The thickness of the conversion lamina is in a range of between 60 μm and 170 μm inclusive.
1. A conversion lamina for a radiation-emitting semiconductor component, the conversion lamina comprising:
a base material; and
a conversion substance embedded in the base material, wherein the conversion lamina has a thickness that lies in a range between 60 inclusive and 170 μm inclusive, and
wherein a surface of the conversion lamina comprises a mesh structure.
2. The conversion lamina according to claim 1 , wherein the thickness lies in a range of 90 μm to 110 μm.
3. The conversion lamina according to claim 1 , wherein a proportion of the conversion substance in the base material is between 55 wt % and 70 wt %.
4. The conversion lamina according to claim 1 , wherein the base material contains silicone.
5. The conversion lamina according to claim 1 ,
wherein a proportion of the conversion substance in the base material is between 55 wt % and 70 wt % and wherein the base material contains silicone, and
wherein a surface of the conversion lamina comprises a mesh structure.
6. The conversion lamina according to claim 1 , further comprising a recess arranged in an intended bonding pad region of a radiation-emitting semiconductor component.
7. A conversion lamina for a radiation-emitting semiconductor component, the conversion lamina comprising:
a base material; and
a conversion substance embedded therein, wherein a thickness of the conversion lamina lies in a range between 60 μm inclusive and 170 μm inclusive,
wherein a surface of the conversion lamina comprises a mesh structure, and
wherein the conversion lamina has a recess being arranged in an intended bonding pad region of a radiation-emitting semiconductor component.
8. The conversion lamina according to claim 7 , wherein the thickness lies in a range of 90 μm to 110 μm.
9. The conversion lamina according to claim 7 , wherein a proportion of the conversion substance in the base material is between 55 wt % and 70 wt %.
10. The conversion lamina according to claim 7 , wherein the base material contains silicone.