IP Library Granted Patent US 9,721,667
Granted Patent B2
US 9,721,667 · App. 15/054,467 · Granted Aug 1, 2017

High voltage switch circuit for switching high voltage without potential drop and semiconductor memory device including the same

Inventors: Yeong Joon Son (Icheon-si, KR); Jin Su Park (Icheon-si, KR)
Assignee: SK hynix Inc.
G11C16/12G11C16/0466G11C16/08G11C16/24G11C16/30H03K17/6871G11C5/147
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Quick Facts
Patent No.
US 9,721,667
App. No.
15/054,467
Granted
Aug 1, 2017
Kind
B2
Abstract

There are provided a high voltage switch circuit and a semiconductor memory device including the same. A high voltage switch circuit may include a switching circuit including a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal, and a control signal generator for applying, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal.

Claims (11)

1. A high voltage switch circuit, comprising:

a switching circuit configured to include a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal; and

a control signal generator configured to apply, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal,

wherein the control signal generator includes:

a second depletion transistor and a second high voltage transistor, which are coupled in series between the input terminal and a node; and

a third high voltage transistor configured to transmit the first enable signal to the node in response to a high voltage signal.

2. The high voltage switch circuit of claim 1 , wherein the first high voltage transistor is a high voltage PMOS transistor.

3. The high voltage switch circuit of claim 1 , wherein the second high voltage transistor is a high voltage PMOS transistor.

4. The high voltage switch circuit of claim 3 , wherein the second enable signal is in a reverse relationship with the first enable signal.

5. The high voltage switch circuit of claim 4 , wherein the second enable signal is applied to a gate of the second high voltage transistor.

6. The high voltage switch circuit of claim 1 , wherein the switching circuit transmits, to the output terminal, the input voltage input to the input terminal without any potential drop.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 26, 2016
From: SON, YEONG JOON; PARK, JIN SU
To: SK HYNIX INC.
Reel/Frame 037940/0479 →
Priority Claims (1)
KR 10-2015-0132419 · Sep 18, 2015 · national
Continuity (1)
Related Publication 20170084339A1 · Mar 23, 2017