Optoelectronic devices incorporating single crystalline aluminum nitride substrate
The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 10 5 cm −2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure including a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer. In certain embodiments, the optoelectronic devices of the invention exhibit a reverse leakage current less than about 10 −5 A/cm 2 at −10 V and/or an L80 of at least about 5000 hours at an injection current density of 28 A/cm 2 .
1. An optoelectronic device adapted to emit ultraviolet light, comprising:
an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 10 5 cm −2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and
an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure comprising a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer;
wherein the optoelectronic device has a reverse leakage current less than about 10 −5 A/cm 2 at −10V.
2. The optoelectronic device of claim 1 , wherein the dislocation density of the substrate is lower than 10 4 cm −2 .
3. The optoelectronic device of claim 1 , wherein the dislocation density of the substrate is lower than 10 3 cm −2 .
4. The optoelectronic device of claim 1 , wherein the dislocation density of the substrate is lower than 10 2 cm −2 .
5. The optoelectronic device of claim 1 , wherein the FWHM of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 100 arcsec.
6. The optoelectronic device of claim 1 , wherein the FWHM of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 50 arcsec.
7. The optoelectronic device of claim 1 , wherein the FWHM of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 25 arcsec.
8. The optoelectronic device of claim 1 , wherein the ultraviolet light-emitting diode structure further comprises a multi-well active region extending between the n-type semiconductor layer and the p-type semiconductor layer.
9. The optoelectronic device of claim 1 , wherein the optoelectronic device has a reverse leakage current less than about 10 −6 A/cm 2 at −10V.
10. The optoelectronic device of claim 1 , wherein the emission wavelength of the optoelectronic device is in the range from about 250 nm to 290 nm.
11. The optoelectronic device of claim 1 , wherein the n-type semiconductor layer comprises n-Al0.75Ga0.25N and the p-type semiconductor layer comprises p-GaN.
12. The optoelectronic device of claim 1 , wherein the ultraviolet light-emitting diode structure is deposited onto the substrate by metal organic chemical vapor deposition.
13. The optoelectronic device of claim 1 , wherein the aluminum nitride single crystalline substrate is prepared by physical vapor transport.
14. An optoelectronic device adapted to emit ultraviolet light, comprising:
an aluminum nitride single crystalline substrate prepared by physical vapor transport, wherein the dislocation density of the substrate is less than about 10 5 cm −2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and
an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate and adapted to emit light at a wavelength of about 150 to about 300 nm, the diode structure comprising a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer;
wherein the optoelectronic device is characterized by an L80 of 2000 hours or greater at an injection current density of 150 A/cm 2 .
15. The optoelectronic device of claim 14 , wherein the optoelectronic device is characterized by a reverse leakage current less than about 10 −6 A/cm 2 at −10V.
16. The optoelectronic device of claim 14 , wherein the emission wavelength of the optoelectronic device is in the range from about 250 nm to 290 nm.
17. The optoelectronic device of claim 14 , wherein the FWHM of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 25 arcsec.
18. The optoelectronic device of claim 14 , wherein the dislocation density of the substrate is lower than 10 2 cm −2 .
19. The optoelectronic device of claim 14 , wherein the optoelectronic device has a reverse leakage current less than about 10 −5 A/cm 2 at −10V.
20. The optoelectronic device of claim 14 , wherein the n-type semiconductor layer comprises n-Al0.75Ga0.25N and the p-type semiconductor layer comprises p-GaN.
21. The optoelectronic device of claim 14 , wherein the ultraviolet light-emitting diode structure further comprises a multi-well active region extending between the n-type semiconductor layer and the p-type semiconductor layer.