SEMICONDUCTOR DEVICE THAT WRITES TEMPERATURE DATA FOR SUBSEQUENT DATA READING
A semiconductor device includes a substrate having a connector for connection with a host, a semiconductor memory device mounted on the substrate, a temperature sensor mounted on the substrate, and a controller mounted on the substrate. The controller is configured to write, in the semiconductor memory device, write data received through the connector together with temperature data representing temperature detected by the temperature sensor.
1 . A semiconductor device, comprising:
a substrate having a connector for connection with a host;
a semiconductor memory device mounted on the substrate;
a temperature sensor mounted on the substrate; and
a controller mounted on the substrate and configured to write, in the semiconductor memory device, write data received through the connector together with temperature data representing a temperature detected by the temperature sensor.
2 . The semiconductor device according to claim 1 , wherein
the controller is configured to read the temperature data from the semiconductor memory device prior to reading the write data, and to read the write data at a reading voltage corresponding to the temperature data.
3 . The semiconductor device according to claim 2 , wherein
when the temperature data indicates a temperature lower than a predetermined value, the controller reads the write data at a first reading voltage, and
when the temperature data indicates a temperature higher than the predetermined value, the controller reads the write data at a second reading voltage that is lower than the first reading voltage.
4 . The semiconductor device according to claim 1 , wherein
the semiconductor memory device includes a memory region for storing data from the connector and a redundancy region, and
the controller writes the write data in the memory region and the temperature data in the redundancy region.
5 . The semiconductor device according to claim 1 , wherein the semiconductor memory device is a nonvolatile memory device.
6 . The semiconductor device according to claim 5 , further comprising:
a volatile semiconductor memory device, wherein
the controller is configured to write the write data received through the connector in the volatile semiconductor memory device, receive the temperature data from the temperature sensor, and then
the write data written in the volatile semiconductor memory device and the temperature data received from the temperature sensor are written in the nonvolatile memory device.
7 . The semiconductor device according to claim 1 , wherein
the temperature sensor is disposed on a surface of the substrate on which the semiconductor memory device and the controller are disposed.
8 . The semiconductor device according to claim 1 , wherein
the temperature sensor is attached to the semiconductor memory device.
9 . A computing device, comprising:
a display;
a mother board having a connector; and
a semiconductor memory module connected to the connector, and including
a substrate having a connector for connection with a host,
a semiconductor memory device mounted on the substrate,
a temperature sensor mounted on the substrate, and
a controller mounted on the substrate and configured to write, in the semiconductor memory device, write data received through the connector together with temperature data representing a temperature detected by the temperature sensor.
10 . The computing device according to claim 9 , wherein
the controller is configured to read the temperature data from the semiconductor memory device prior to reading the write data, and to read the write data at a reading voltage corresponding to the temperature data.
11 . The computing device according to claim 10 , wherein
when the temperature data indicates that a temperature lower than a predetermined value, the controller reads the write data at a first reading voltage, and
when the temperature data indicates a temperature higher than the predetermined value, the controller reads the write data at a second reading voltage that is lower than the first reading voltage.
12 . The computing device according to claim 9 , wherein
the semiconductor memory device includes a memory region for storing data from the connector and a redundancy region, and
the controller writes the write data in the memory region and the temperature data in the redundancy region.
13 . The computing device according to claim 9 , wherein the semiconductor memory device is a nonvolatile memory device.
14 . The computing device according to claim 13 , wherein
the semiconductor memory module further includes a volatile semiconductor memory device,
the controller is configured to write the write data received through the connector in the volatile semiconductor memory device, receive the temperature data from the temperature sensor, and then
the write data written in the volatile semiconductor memory device and the temperature data received from the temperature sensor are written in the nonvolatile memory device.
15 . The computing device according to claim 9 , wherein
the temperature sensor is disposed on a surface of the substrate on which the semiconductor memory device and the controller are disposed.
16 . The computing device according to claim 9 , wherein
the temperature sensor is attached to the semiconductor memory device.
17 . A method for carrying out a data access with respect to
a semiconductor memory device, comprising:
detecting a temperature at a vicinity of the semiconductor memory device, when a write command is received; and
writing write data associated with the write command in the semiconductor memory device together with temperature data representing the detected temperature.
18 . The method according to claim 17 , further comprising:
when a read command to read the write data is received, reading the temperature data from the semiconductor memory device, and then reading the write data from the semiconductor memory device at a reading voltage corresponding to the temperature data.
19 . The method according to claim 18 , wherein
when the temperature data indicates a temperature lower than a predetermined value, the write data are read at a first reading voltage, and
when the temperature data indicates a temperature higher than the predetermined value, the write data are read at a second reading voltage that is lower than the first reading voltage.
20 . The method according to claim 17 , wherein
the semiconductor memory device includes a memory region and a redundancy region, and
the write data are written in the memory region and the temperature data are written in the redundancy region.