Semiconductor device
View Patent ↗A semiconductor device includes a first semiconductor chip having a first surface, a second surface on a side of the first semiconductor chip opposite to that of the first surface, a first electrode on the first surface, a second electrode on the second surface, and a first contact electrically connecting the first electrode and the second electrode, and a second semiconductor chip having a third surface facing the first surface, a fourth surface on a side of the second semiconductor chip opposite to that of the third surface and a third electrode on the fourth surface. The semiconductor device further includes a metal wire electrically connecting the first and third electrodes, a first insulating layer on the second surface, a first conductive layer that is on the first insulating layer and electrically connected to the second electrode, and a first external terminal electrically connected to the first conductive layer.
1. A semiconductor device comprising:
a first semiconductor chip having a first surface, a second surface on a side of the first semiconductor chip opposite to that of the first surface, a first electrode on the first surface, a second electrode on the second surface, and a first contact electrically connecting the first electrode and the second electrode;
a second semiconductor chip having a third surface that faces the first surface, a fourth surface on a side of the second semiconductor chip opposite to that of the third surface, and a third electrode on the fourth surface;
a metal wire that electrically connects the third electrode to the first electrode;
a first insulating layer that is on the second surface of the first semiconductor chip and includes a first opening;
a first conductive layer that is in the first opening and on a part of the first insulating layer and is electrically connected to the second electrode;
a second conductive layer that is directly in contact with the first conductive layer;
a second insulating layer that is on the first insulating layer and the second conductive layer and includes a second opening;
a third conductive layer that is in the second opening and is electrically connected to the second conductive layer; and
a first external terminal in direct contact with the third conductive layer, wherein
no wiring substrate is present between the first semiconductor chip and the first external terminal.
2. The semiconductor device according to claim 1 , further comprising:
a fourth conductive layer that is in a third opening included in the first insulating layer and on a part of a fourth electrode, which is on the second surface, and is electrically connected to the fourth electrode; and
a second external terminal that is electrically connected to the fourth conductive layer.
3. The semiconductor device according to claim 2 , further comprising:
a fifth conductive layer that is directly in contact with the fourth conductive layer;
a sixth conductive layer that is in a fourth opening included in the second insulating layer and is electrically connected to the fifth conductive layer, wherein
the second external terminal is directly in contact with the sixth conductive layer.
4. The semiconductor device according to claim 3 , wherein
a distance between the first external terminal and the second external terminal is greater than a distance between the second electrode and the fourth electrode.
5. The semiconductor device according to claim 1 , wherein
the first surface includes a first circuit element that is electrically connected to the first electrode, and
the fourth surface includes a second circuit element that is electrically connected to the third electrode.
6. The semiconductor device according to claim 5 , wherein
the second surface includes a fourth electrode, and
the first semiconductor chip includes a second contact electrically connecting the first circuit element and the fourth electrode.
7. The semiconductor device according to claim 1 , wherein
the first semiconductor chip and the second semiconductor chip have substantially the same structure.
8. The semiconductor device according to claim 1 , wherein
the first external terminal is a solder bump.
9. The semiconductor device according to claim 1 , further comprising:
a resin layer that covers the first semiconductor chip and the second semiconductor chip, wherein
the resin layer is in contact with a lower surface and a side surface of the first insulating layer.
10. A semiconductor device comprising:
a first semiconductor chip that includes a first surface, a second surface on a side of the first semiconductor chip opposite to that of the first surface, a first electrode on the first surface, a second electrode on the second surface, and a first contact electrically connecting the first electrode and the second electrode;
a second semiconductor chip that includes a third surface that faces the first surface, a fourth surface on a side of the second semiconductor chip opposite to that of the third surface, and a third electrode on the fourth surface;
a metal wire that electrically connects the third electrode and the first electrode;
a first conductive layer that includes a first portion which extends in a first direction intersecting the second surface and is electrically connected to the second electrode and a second portion which extends in a second direction intersecting the first direction;
a second conductive layer that is directly in contact with the first conductive layer and is physically separated from the second electrode by the first conductive layer;
a third conductive layer that is directly in contact with the second conductive layer and is physically separated from the first conductive layer by the second conductive layer; and
a first external terminal that is directly in contact with the third conductive layer and physically separated from the second conductive layer by the third conductive layer, wherein
no wiring substrate is present between the first semiconductor chip and the first external terminal.
11. The semiconductor device according to claim 10 , further comprising:
a fourth conductive layer that is on a part of a fourth electrode, which is on the second surface, and is electrically connected to the fourth electrode; and
a second external terminal that is electrically connected to the fourth conductive layer.
12. The semiconductor device according to claim 11 , further comprising:
a fifth conductive layer that is directly in contact with the fourth conductive layer and is physically separated from the fourth electrode by the fourth conductive layer; and
a sixth conductive layer that is directly in contact with the fifth conductive layer and is physically separated from the fourth conductive layer by the fifth conductive layer, wherein
the second external terminal is directly in contact with the sixth conductive layer is physically separated from the fifth conductive layer by the sixth conductive layer.
13. The semiconductor device according to claim 12 , wherein
a distance between the first external terminal and the second external terminal is greater than a distance between the second electrode and the fourth electrode.
14. The semiconductor device according to claim 10 , wherein
the first surface includes a first circuit element that is electrically connected to the first electrode,
the fourth surface includes a second circuit element that is electrically connected to the third electrode.
15. The semiconductor device according to claim 14 , wherein
the second surface includes a fourth electrode,
the first semiconductor chip includes a second contact that electrically connects the first circuit element and the fourth electrode.
16. The semiconductor device according to claim 10 , wherein
the first semiconductor chip and the second semiconductor chip have substantially the same structure.
17. The semiconductor device according to claim 10 , wherein
the first external terminal is a solder bump.
18. The semiconductor device according to claim 10 , further comprising:
a resin layer that covers the first semiconductor chip and the second semiconductor chip, wherein
the resin layer is in contact with a lower surface and a side surface of the first insulating layer.
19. The semiconductor device according to claim 1 , further comprising:
a third semiconductor chip, wherein
the first, second and third semiconductor chips are electrically connected to the first external terminal.
20. The semiconductor device according to claim 10 , further comprising:
a third semiconductor chip, wherein
the first, second and third semiconductor chips are electrically connected to the first external terminal.