Semiconductor device manufacturing apparatus and method

1. A method of manufacturing a semiconductor device using a semiconductor device manufacturing apparatus including a stage configured to hold a substrate, a head section facing the stage and configured to hold a semiconductor element, a driving section configured to drive one of the head section and the stage to move relative to one another in a first direction intersecting the head section and the stage and apply a load to the other one of the head section and the stage, a load sensor configured to sense a load value of the applied load, and a heating portion configured to heat the head section, the method comprising:

moving one of the head section and the stage in the first direction towards the other with the driving section and applying the load to the other until the load value becomes a first value;

moving the head section away from the stage with the driving section to reduce the applied load until the load value becomes a second value which is smaller than the first value;

after the semiconductor element is pressed against the stage with the reduced load, heating the head section with the heating portion;

terminating the heating after a period of time to allow the head section to cool;

during the cooling of the head section, maintaining a desired distance between the stage and the head section by moving one of the head section and the stage in the first direction towards the other one of the head section and the stage with the driving section; and

separating the semiconductor element from the head section in accordance with a change in the load value.

2. The method according to claim 1 , further comprising:

after the semiconductor element is separated from the head section, moving one of the head section and the stage away from the other.

3. The method according to claim 1 , wherein

a metal bump is provided on one of the substrate and the semiconductor element and a metal electrode is provided on the other of the substrate and the semiconductor element, and

the metal bump is not completely solidified at the time the semiconductor element is separated from the head section.

4. The method according to claim 1 , further comprising:

moving the head section away from the stage after the head section is heated to a desired temperature and before the heating is terminated.

5. A method of manufacturing a semiconductor device using a semiconductor device manufacturing apparatus including a stage configured to hold a substrate, a head section facing the stage and configured to hold a semiconductor element, a driving section configured to drive one of the head section and the stage to move relative to one another in a first direction intersecting the head section and the stage and apply a load to the other one of the head section and the stage, a load sensor configured to sense a load value of the applied load, and a heating portion configured to heat the head section, the method comprising:

moving one of the head section and the stage in the first direction towards the other with the driving section;

while the semiconductor element is pressed against the stage, heating the head section with the heating portion so that solder on the substrate is melted;

when the load value becomes substantially zero after the solder is melted, moving one of the head section and the stage in a second direction opposite to the first direction;

terminating the heating after a period of time to allow the head section to cool;

during the cooling of the head section, maintaining a desired distance between the stage and the head section by moving one of the head section and the stage in the first direction towards the other one of the head section and the stage with the driving section; and

separating the semiconductor element from the head section in accordance with a change in the load value.

6. The method according to claim 5 , further comprising:

after the semiconductor element is separated from the head section, moving one of the head section and the stage away from the other.

7. The method according to claim 5 , wherein

a metal bump is provided on one of the substrate and the semiconductor element and a metal electrode is provided on the other of the substrate and the semiconductor element, and

the metal bump is not completely solidified at the time the semiconductor element is separated from the head section.

8. The method according to claim 5 , further comprising:

when one of the head section and the stage is moved in the first direction towards the other with the driving section, applying the load to the other until the load value becomes a first value, and

moving the head section away from the stage with the driving section to reduce the applied load until the load value becomes a second value which is smaller than the first value, wherein

the head section is heated with the heating portion after the semiconductor element is pressed against the stage with the reduced load.

9. The method according to claim 5 , further comprising:

moving the head section away from the stage after the head section is heated to a desired temperature and before the heating is terminated.