Semiconductor device and method for producing semiconductor device
View Patent ↗A semiconductor device includes a semiconductor substrate, a device layer located at an upper surface of the semiconductor substrate, an insulating layer located on the device layer, and a through electrode. The through electrode includes a body located in a through hole provided in the insulating layer and a head located on the body and the insulating layer and is electrically connected to an upper-layer wiring in the device layer. A perimeter of the head on a lower surface side thereof is smaller than a perimeter of the head on an upper surface side thereof.
1. A semiconductor device, comprising:
a semiconductor substrate;
a device layer at an upper surface of the semiconductor substrate;
an insulating layer on an upper surface of the device layer;
a through electrode extending through a through hole in the insulating layer and electrically connected to a wiring in the device layer at the upper surface of the device layer, the through electrode including a body in the through hole and a head disposed on the body and above an uppermost surface of the insulating layer; and
a metal layer extending from the upper surface of the insulating layer into the through hole, the metal layer being between the head and upper surface of the insulating layer and between the body and a side surface of the insulating layer in the through hole, wherein
an outer perimeter of the head at an outermost edge of a lower surface thereof that is at a position spaced outwardly from the metal layer is smaller than an outer perimeter of the head at an outermost edge of an upper surface thereof that is spaced from the lower surface, the outermost edge of the lower surface of the head being higher than and spaced from the uppermost surface of the insulating layer.
2. The semiconductor device according to claim 1 , wherein the metal layer includes:
a first metal layer extending from the upper surface of the insulating layer onto a sidewall of the through hole to contact the wiring in the device layer; and
a second metal layer located on the first metal layer, wherein the through electrode directly contacts the second metal layer.
3. The semiconductor device according to claim 2 , wherein an ionization tendency of a metallic material forming the through electrode is higher than an ionization tendency of a metallic material forming the second metal layer.
4. The semiconductor device according to claim 2 , wherein
the through electrode comprises nickel, and
the second metal layer comprises copper.
5. The semiconductor device according to claim 1 , wherein a depression is formed inwardly of a side surface of the head adjacent the lower surface thereof.
6. The semiconductor device according to claim 1 , wherein the head has a reverse taper shape such that the outer perimeter of the head is gradually reduced from the upper surface to the lower surface thereof.
7. The semiconductor device according to claim 1 , further comprising:
an electrode extending from a lower surface of the semiconductor substrate to the wiring in the device layer.
8. The semiconductor device according to claim 1 , further comprising:
an additional semiconductor substrate;
an additional electrode located at a lower surface of the additional semiconductor substrate, the additional electrode comprising a head portion extending from the lower surface of the additional semiconductor substrate, a perimeter of the head portion on an upper surface thereof is smaller than a perimeter of the head portion on a lower surface thereof; and
an electrical connection portion between the through electrode and the additional electrode.
9. The semiconductor device of claim 8 , wherein the electrical connection portion comprises solder.
10. The semiconductor device of claim 8 , wherein a portion of the additional electrode extending from, and over, the additional semiconductor substrate overlies a rounded undercut.
11. The semiconductor device of claim 8 , wherein a portion of the additional electrode extending from, and over, the additional semiconductor substrate overlies a square undercut.
12. The semiconductor device of claim 8 , wherein the additional electrode comprises a through silicon via.
13. The semiconductor device of claim 8 , wherein a portion of the through electrode extending from, and over, the semiconductor substrate overlies a rounded undercut.
14. The semiconductor device of claim 1 , wherein a thickness of a portion of the head decreases from an outermost edge of the head towards an inward part of the head.
15. The semiconductor device according to claim 1 , wherein the through hole includes a portion formed in an organic layer.
16. The semiconductor device according to claim 1 , wherein the upper surface of the head is concaved.
17. The semiconductor device according to claim 1 , further comprising:
an additional semiconductor substrate;
an additional electrode located at a lower surface of the additional semiconductor substrate, the additional electrode comprising a head portion extending from the lower surface of the additional semiconductor substrate; and
an electrical connection portion between the through electrode and the additional electrode,
wherein the head of the additional electrode is covered with the electrical connection portion.
18. The semiconductor device according to claim 1 , further comprising:
a film including gold disposed on the upper surface of the head of the through electrode.
19. The semiconductor device according to claim 18 , wherein the outer perimeter of the head on the lower surface thereof is larger than an outer perimeter of the body at a position contacting the lower surface of the head.
20. The semiconductor device according to claim 1 , further comprising:
an outermost side surface of the metal layer on the uppermost surface of the insulating layer is disposed inwardly, along a direction parallel to the uppermost surface of the insulating layer, of an outermost side surface of the head.
21. The semiconductor device according to claim 1 , wherein an ionization tendency of a metallic material forming the through electrode is higher than an ionization tendency of a metallic material forming a layer of the metal layer, the layer of the metal layer being the layer in direct contact with the through electrode.
22. The semiconductor device according to claim 21 , wherein
the through electrode comprises nickel, and
the layer in direct contact with the through electrode comprises copper.
23. The semiconductor device according to claim 1 , wherein the metal layer is not between a portion of the head and the uppermost surface of the insulating layer along a direction orthogonal to the uppermost surface of the insulating layer.
24. The semiconductor device according to claim 1 , further comprising:
an adhesive disposed between and in contact with a portion of the head and the uppermost surface of the insulating layer in a direction orthogonal to the uppermost surface of the insulating layer.