Semiconductor storage device
View Patent ↗A semiconductor storage device includes a substrate having a wiring, a first semiconductor memory, a terminal portion, a holder surrounding the terminal portion, a case, and a first plate-shaped member. The first semiconductor memory is disposed on a first principal surface of the substrate and is connected to the wiring. The terminal portion is connected to the substrate at a first end portion of the substrate and has a terminal connected to the wiring. The case houses part of the holder, the substrate, and the first semiconductor memory. Between the first principal surface and a first wall portion of the case facing the first principal surface, the first plate-shaped member is disposed. The first plate-shaped member is connected to the holder and the first principal surface on a second end portion side of the substrate, and has thermal conductivity.
1. A semiconductor storage device comprising:
a substrate that comprises a plurality of wirings, a first end portion, and a second end portion;
a terminal portion that is connected to the substrate at the first end portion and comprises a terminal connected to the wirings;
a connector to connect to a host device, the connector comprises a holder that surrounds the terminal portion;
a first semiconductor memory that is disposed on a first principal surface of the substrate, is disposed between the first end portion and the second end portion, and is connected to the wirings;
a controller that is disposed on the first principal surface of the substrate, is disposed between the first end portion and the first semiconductor memory, and is connected to the wirings and controls the first semiconductor memory;
a case that houses part of the holder, the substrate, the first semiconductor memory and the controller; and
a first plate-shaped member that is disposed between the first principal surface and a first wall portion of the case facing the first principal surface separated from the first semiconductor memory, the controller, and the case, is connected to the holder at a first end of the first plate-shaped member, is connected to the second end portion at a second end of the first plate-shaped member, and comprises thermal conductivity, wherein
the first plate-shaped member comprises electrical conductivity and is connected to a ground wiring of the wirings on the first principal surface on the second end portion side,
the first plate-shaped member is larger than the ground wiring in a direction vertical to a direction from the first end portion to the second end portion,
the direction from the first end portion to the second end portion is along a direction from the first end of the first plate-shaped member to the second end of the first plate-shaped member, and
the first end of the first plate-shaped member and the second end of the first plate-shaped member do not overlap the first semiconductor memory and the controller in a direction vertical to the first principal surface of the substrate.
2. The semiconductor storage device according to claim 1 , comprising
a second plate-shaped member that is disposed between a second principal surface of the substrate on an opposite side of the first principal surface and a second wall portion of the case facing the second principal surface separated from the case, is connected to the holder at a first end, is connected to the second principal surface on the second end portion side at a second end, and comprises thermal conductivity.
3. The semiconductor storage device according to claim 1 , comprising
a second plate-shaped member that is disposed between a second principal surface of the substrate on an opposite side of the first principal surface and a second wall portion of the case facing the second principal surface separated from the case, is connected to the holder at a first end, is connected to the second principal surface on the second end portion side at a second end, and comprises thermal conductivity.
4. The semiconductor storage device according to claim 2 , comprising
a second semiconductor memory that is disposed on the second principal surface and is connected to the wirings; wherein
the second plate-shaped member is disposed separated from the second semiconductor memory.
5. The semiconductor storage device according to claim 3 , comprising
a second semiconductor memory that is disposed on the second principal surface and is connected to the wirings; wherein
the second plate-shaped member is disposed separated from the second semiconductor memory.
6. The semiconductor storage device according to claim 2 , wherein
the second plate-shaped member comprises electrical conductivity and is connected to a ground wiring of the wirings on the second principal surface on the second end portion side.
7. The semiconductor storage device according to claim 3 , wherein
the second plate-shaped member comprises electrical conductivity and is connected to a ground wiring of the wirings on the second principal surface on the second end portion side.
8. The semiconductor storage device according to claim 4 , wherein
the second plate-shaped member comprises electrical conductivity and is connected to a ground wiring of the wirings on the second principal surface on the second end portion side.
9. The semiconductor storage device according to claim 5 , wherein
the second plate-shaped member comprises electrical conductivity and is connected to a ground wiring of the wirings on the second principal surface on the second end portion side.
10. The semiconductor storage device according to claim 1 , wherein the first plate-shaped member contains metal.
11. The semiconductor storage device according to claim 6 , wherein the second plate-shaped member contains metal.
12. The semiconductor storage device according to claim 1 , comprising a first member that is connected to the first semiconductor memory and the first plate-shaped member between the first semiconductor memory and the first plate-shaped member and comprises thermal conductivity and an insulating property.
13. The semiconductor storage device according to claim 4 , comprising a second member that is connected to the second semiconductor memory and the second plate-shaped member between the second semiconductor memory and the second plate-shaped member and comprises thermal conductivity and an insulating property.
14. The semiconductor storage device according to claim 1 , comprising
a third member that is connected to the controller and the first plate-shaped member between the controller and the first plate-shaped member and comprises thermal conductivity and an insulating property, and
wherein the third member comprises resin or ceramic.
15. The semiconductor storage device according to claim 12 , wherein the first member comprises resin or ceramic.
16. The semiconductor storage device according to claim 13 , wherein the second member comprises resin or ceramic.
17. The semiconductor storage device according to claim 1 , wherein the first plate-shaped member is separated from the holder except at the first end and is separated from the substrate except at the second end.
18. The semiconductor storage device according to claim 1 , wherein the first plate-shaped member has smaller thermal resistance compared with the ground wiring.
19. The semiconductor storage device according to claim 5 , wherein the first plate-shaped member and the second plate-shaped member shield the electromagnetic waves generated at the substrate by the operations of the controller, the first semiconductor memory, and the second semiconductor memory.
20. The semiconductor storage device according to claim 19 , wherein the second plate-shaped member comprises electrical conductivity and is connected to the ground wiring.