IP Library Granted Patent US 10,121,767
Granted Patent B2
US 10,121,767 · App. 15/062,368 · Granted Nov 6, 2018

Semiconductor storage device and manufacturing method thereof

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Quick Facts
Patent No.
US 10,121,767
App. No.
15/062,368
Granted
Nov 6, 2018
Kind
B2
Abstract

A semiconductor storage device of the present embodiments includes a substrate, a first semiconductor chip and a sealer. The substrate has wirings. The first semiconductor chip is connected to the wirings on the substrate. The sealer has a first surface, which does not face a top surface of the first semiconductor chip and is provided with a mark, and seals the first semiconductor chip.

Claims (21)

1. A semiconductor storage device being capable of being inserted to a socket of a host device, the semiconductor storage device comprising:

a substrate comprising wiring, a first substrate section, and a second substrate section;

a first semiconductor chip that is connected to the wiring on the second substrate section;

a sealer that comprises a first surface, and a second surface and seals the first semiconductor chip, the first surface not facing a top surface of the first semiconductor chip, the second surface facing a top surface of the first semiconductor chip, the first surface being connected to the second surface and being shorter than the second surface in an inserting direction into the socket; and

a mark being provided on the first surface of the sealer.

2. The semiconductor storage device according to claim 1 , wherein

the first semiconductor chip is a laminated chip in which a plurality of semiconductor chips are laminated, and

a recessed section that fastens the semiconductor storage device to a host device exists in the first surface.

3. The semiconductor storage device according to claim 2 , wherein the first surface does not face an electronic component.

4. The semiconductor storage device according to claim 2 , further comprising a passive component.

5. The semiconductor storage device according to claim 2 , further comprising a second semiconductor chip.

6. The semiconductor storage device according to claim 2 , wherein

the first surface comprises a first region and a second region sandwiching the recessed section, and

the mark is provided to at least one of the first region and the second region.

7. The semiconductor storage device according to claim 1 , wherein the mark is an engraving by a laser.

8. The semiconductor storage device according to claim 1 , wherein the sealer comprises a resin.

9. The semiconductor storage device according to claim 1 , wherein the substrate is a printed wiring board.

10. The semiconductor storage device according to claim 1 , wherein the first semiconductor chip comprises at least one of a memory chip and a controller chip.

11. The semiconductor storage device according to claim 5 , wherein the second semiconductor chip is one of a memory chip and a controller chip.

12. The semiconductor storage device according to claim 1 , wherein

the first surface of the sealer extends beyond an edge of the second substrate section.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 29, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043052/0218 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 7, 2016
From: SUGIMURA, MISA; IIDA, AKIHIRO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 037905/0071 →