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View Patent ↗According to one embodiment, a thin-film transistor includes a semiconductor layer SC including a channel region, and a source region and a drain region on both sides of the channel region, a gate electrode GE, a first electrode SE connected to the source region via a first contact hole CH 1, a second electrode DE connected to the drain region via a second contact hole CH 2, a source line connected to the first electrode, and a drain line connected to the second electrode. A distance from the first and second contact holes to an end of the respective regions in a direction of a channel width is greater than or equal to 5 μm and less than or equal to 30 μm. The source line and the drain line extend in directions different from each other.
1. A thin-film transistor comprising:
a semiconductor layer comprising:
a channel region having a channel length and a channel width greater than the channel length; and
a source region and a drain region on both sides of the channel region;
a gate electrode which faces the channel region with a first insulating layer being interposed;
a second insulating layer which covers the first insulating layer and a gate electrode;
a first electrode connected to the source region via a first contact hole formed on the first and second insulating layers;
a second electrode connected to the drain region via a second contact hole formed on the first and second insulating layers;
a source line connected to the first electrode; and
a drain line connected to the second electrode, wherein
a distance from the first and second contact holes to an end of the respective regions in a direction of the channel width is greater than or equal to 5 μm and less than or equal to 30 μm in the source region and the drain region, and
the source line and the drain line extend in directions different from each other.
2. The thin-film transistor of claim 1 , wherein
the source line is connected to a side opposite to the gate electrode with respect to the first electrode, and
the drain line is connected to a side opposite to the gate electrode with respect to the second electrode.
3. The thin-film transistor of claim 2 , further comprising:
a plurality of first electrodes connected to the source region via the respective first contact holes; and
a plurality of second electrodes connected to the drain region via the respective second contact holes, wherein
in the source region and the drain region, the first contact holes and the second contact holes are provided with space in the direction of the channel width, and an interval between the first contact holes and an interval between the second contact holes are greater than or equal to 5 μm and less than or equal to 30 μm.
4. The thin-film transistor of claim 2 , wherein
the first contact hole and the second contact hole are provided asymmetrically with respect to the gate electrode.
5. The thin-film transistor of claim 3 , wherein
the first contact holes and the second contact holes are provided asymmetrically with respect to the gate electrode.
6. The thin-film transistor of claim 5 , wherein
a length of the source region in a direction of the channel length is set such that a length of an area other than an area facing the first contact holes is less than a length of the area facing the first contact holes.
7. The thin-film transistor of claim 1 , further comprising:
a plurality of first electrodes connected to the source region via the respective first contact holes; and
a plurality of second electrodes connected to the drain region via the respective contact holes, wherein
in the source region and the drain region, the first contact holes and the second contact holes are provided with space in the direction of the channel width, and an interval between the first contact holes and an interval between the second contact holes are greater than or equal to 5 μm and less than or equal to 30 μm.
8. The thin-film transistor of claim 1 , wherein
the first contact hole and the second contact hole are provided asymmetrically with respect to the gate electrode.
9. The thin-film transistor of claim 7 , wherein
the first contact holes and the second contact holes are provided asymmetrically with respect to the gate electrode.
10. The thin-film transistor of claim 9 , wherein
a length of the source region in a direction of the channel length is set such that a length of an area other than an area facing the first contact holes is less than a length of the area facing the first contact holes.
11. The thin-film transistor of claim 1 , wherein
a length of the source region in a direction of the channel length is set such that a length of an area other than an area facing the first contact hole is less than a length of the area facing the first contact hole.