Semiconductor device
View Patent ↗A semiconductor device includes a power element and a heat sensing element configured to detect a temperature of the power element. The power element includes lateral MOS transistors having drains, two of the drains being shorter in length than the remaining drains, and the heat sensing element has a rectangular shape and is disposed between the two shorter drains to accurately detect the temperature of the power element.
1. A semiconductor device, comprising:
a power element formed on a first semiconductor layer and having a plurality of lateral MOS transistors arranged at equal pitches in a first direction, the plurality of lateral MOS transistors having drains that extend in a second direction perpendicular to the first direction, two of the drains being shortened drains that have a width shorter in the second direction than that of the remaining drains of the plurality of lateral MOS transistors; and
a rectangular heat sensing element made from a second semiconductor layer isolated from the first semiconductor layer by an insulating film, the rectangular heat sensing element being configured to detect a temperature of the power element and being arranged between the two shortened drains of the plurality of lateral MOS transistors so that at least two sides of the rectangular heat sensing element are adjacent to the power element in a plan view.
2. A semiconductor device according to claim 1 ; wherein a difference between a source width and a drain width of the shortened drains in the second direction is larger than a difference between a source width and a drain width in the second direction of another one of the plurality of lateral MOS transistors that is located farther from the rectangular heat sensing element.
3. A semiconductor device according to claim 1 , wherein a side of each of the drains adjacent to the rectangular heat sensing element is surrounded by a gate electrode.
4. A semiconductor device according to claim 1 , wherein the second semiconductor layer from which the rectangular heat sensing element is made, and the first semiconductor layer from which a gate electrode of the power element is made, are the same.