IP Library Granted Patent US 10,549,371
Granted Patent B2
US 10,549,371 · App. 15/064,653 · Granted Feb 4, 2020

Method of manufacturing a ceramic metallization for ceramic metal transition

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,549,371
App. No.
15/064,653
Granted
Feb 4, 2020
Kind
B2
Abstract

A method of manufacture of a ceramic metallization for ceramic metal transition, and ceramic metal transition itself, for the use in low, medium and high-voltage techniques, which may avoid a brazing foil, and/or overcome problems with the use of thin brazing foils, and/or to make the manufacture easier, but also more effective, wherein, on top of the Ni-layer will be placed an Ag-layer as a third layer, and then the metal part will be laid on top and connected by brazing or tempering.

Claims (29)

1. A method of manufacturing a ceramic metallization for a ceramic metal transition for use with components of a low-, medium-, and/or high-voltage device, switch, or switching unit by which a ceramic body is connected to a metal part, the method comprising:

covering a ceramic body, comprising a Al 2 O 3 material, with at least a first layer comprising MoMn and a second layer comprising Ni;

placing a third layer comprising Ag on top of the second layer;

laying the metal part on top of the third layer; and

connecting the metal part to one or more of the first, second, and third layers at a connecting region,

wherein the connecting comprises brazing, and the brazing comprises in-situ tempering under an inert gas environment, and

wherein the connecting takes place at a temperature above an alloying point so as to provide an in-situ alloying process by diffusion of metals in the connecting region.

2. The method of claim 1 , wherein the ceramic body mainly comprises the Al 2 O 3 material.

3. The method of claim 1 , wherein the connecting connects the metal part to the ceramic body.

4. The method of claim 1 , wherein the first layer mainly comprises MoMn.

5. The method of claim 1 , wherein the first layer comprises tungsten.

6. The method of claim 1 , wherein the second layer mainly comprises Ni.

7. The method of claim 1 , wherein the third layer mainly comprises Ag.

8. The method of claim 1 , wherein the placing of the third layer is at least partially carried out galvanically.

9. The method of claim 1 , wherein the placing of the third layer is at least partially carried out by cold gas spraying.

10. A method of manufacturing a ceramic metallization for a ceramic metal transition for use with components of a low-, medium-, and/or high-voltage device, switch, or switching unit by which a ceramic body is connected to a metal part, the method comprising:

covering a ceramic body, comprising a Al 2 O 3 material, with at least a first layer comprising MoMn and a second layer comprising Ni;

placing a third layer comprising Ag on top of the second layer;

laying the metal part on top of the third layer; and

connecting the metal part to one or more of the first, second, and third layers at a connecting region,

wherein the connecting comprises brazing, and the brazing comprises in-situ tempering under an active gas environment, and

wherein the connecting takes place at a temperature above an alloying point so as to provide an in-situ alloying process by diffusion of metals in the connecting region.

11. A method of manufacturing a ceramic metallization for a ceramic metal transition for use with components of a low-, medium-, and/or high-voltage device, switch, or switching unit by which a ceramic body is connected to a metal part, the method comprising:

covering a ceramic body, comprising a Al 2 O 3 material, with at least a first layer comprising MoMn and a second layer comprising Ni;

placing a third layer comprising Ag on top of the second layer;

laying the metal part on top of the third layer; and

connecting the metal part to one or more of the first, second, and third layers at a connecting region,

wherein the connecting comprises brazing, and the brazing comprises in-situ tempering under a hydrogen environment, and

wherein the connecting takes place at a temperature above an alloying point so as to provide an in-situ alloying process by diffusion of metals in the connecting region.

Assignments (2)
MERGER Recorded Nov 15, 2016
From: ABB TECHNOLOGY LTD.
To: ABB SCHWEIZ AG
Reel/Frame 040621/0792 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 9, 2016
From: GENTSCH, DIETMAR
To: ABB TECHNOLOGY AG
Reel/Frame 037927/0828 →