Semiconductor device and manufacturing method thereof
View Patent ↗A semiconductor device according to the present embodiment includes a semiconductor substrate, an insulating film and a conductive film. The insulating film is disposed on a first surface of the semiconductor substrate. The insulating film covers a semiconductor element. The conductive film penetrates the semiconductor substrate across from the first surface to a second surface opposite to the first surface. On the second surface, a trench continuously or intermittently exists across from a first end part side of the second surface to a second end part side thereof.
1. A semiconductor device comprising:
a semiconductor substrate;
an insulating film disposed on a first surface of the semiconductor substrate, the insulating film covering a semiconductor element; and
a conductive film penetrating the semiconductor substrate across from the first surface to a second surface opposite to the first surface,
a trench across from a first end part side of the second surface to a second end part side thereof.
2. The semiconductor device according to claim 1 , wherein the trench exists in a continuous grid shape.
3. The semiconductor device according to claim 1 , wherein
a plurality of the trenches exist intermittently, and
at least one of the plurality of trenches exists in a cross shape.
4. The semiconductor device according to claim 1 , wherein the trench exists over a whole surface of the second surface.
5. The semiconductor device according to claim 1 , wherein at least part of the trench penetrates the semiconductor substrate across from the first surface to the second surface.
6. The semiconductor device according to claim 1 , wherein the trench contains a bottomed groove.
7. The semiconductor device according to claim 1 , comprising a reinforcing film disposed inside the trench.
8. The semiconductor device according to claim 1 , comprising
a plurality of the semiconductor substrates facing one another, wherein
the conductive films are arranged in the plurality of semiconductor substrates so as to oppose each other,
the semiconductor device comprising a joint between the conductive films that oppose each other.
9. The semiconductor device according to claim 7 , wherein the reinforcing film comprises Ti, TiN, W, Al, Ni, Cu, SiO2, SiN or SiON.
10. The semiconductor device according to claim 8 , wherein the semiconductor substrate is a silicon substrate.
11. The semiconductor device according to claim 1 , wherein the conductive film is a Through-Silicon Via.
12. The semiconductor device according to claim 1 , wherein the conductive film is supplied inside a through hole, the through hole being formed on the substrate.
13. The semiconductor device according to claim 1 , wherein the conductive film comprises Ni.
14. The semiconductor device according to claim 1 , wherein the conductive film is electrically connected to the semiconductor element.
15. The semiconductor device according to claim 1 , further comprising:
a bump on the semiconductor element, and
wherein the conductive film is electrically connected to the semiconductor element on a first side of the semiconductor element, and a bump is electrically connected to the semiconductor element on a second side opposite to the first side of the semiconductor element.