Semiconductor memory device for sensing memory cell with variable resistance
According to one embodiment, a semiconductor memory device includes a memory cell; a reference signal generation circuit; a sense amplifier; a first transistor configured to electrically couple the memory cell and a first input terminal of the sense amplifier; a second transistor configured to electrically couple the reference signal generation circuit and a second input terminal of the sense amplifier; a first control circuit configured to supply a voltage to gates of the first transistor and the second transistor; a second control circuit configured to supply a first voltage except 0V to a back gate of the first transistor; and a third control circuit configured to supply a second voltage except 0V to a back gate of the second transistor.
1. A semiconductor memory device comprising:
a memory cell which includes a variable resistance element;
a reference signal generation circuit configured to generate a reference signal;
a sense amplifier including a first input terminal and a second input terminal;
a first transistor configured to electrically couple the memory cell and the first input terminal of the sense amplifier;
a second transistor configured to electrically couple the reference signal generation circuit and the second input terminal of the sense amplifier;
a first control circuit configured to supply a voltage to gates of the first transistor and the second transistor;
a second control circuit configured to supply a first voltage except 0V to a back gate of the first transistor;
a third control circuit configured to supply a second voltage except 0V to a back gate of the second transistor; and
a functional circuit including a third transistor,
wherein threshold voltages of the first transistor and the second transistor are greater than a threshold voltage of the third transistor.
2. The device of claim 1 , wherein the second control circuit is configured to supply the first voltage such that the first voltage has temperature dependency and/or the third control circuit is configured to supply the second voltage such that the second voltage has temperature dependency.
3. The device of claim 1 , wherein the second control circuit is configured to supply the first voltage such that the first voltage is a negative voltage and/or the third control circuit is configured to supply the second voltage such that the second voltage is a negative voltage.
4. The device of claim 1 , wherein during a read operation, the second control circuit supplies the first voltage and/or the third control circuit supplies the second voltage.
5. The device of claim 1 , wherein:
the first transistor and the second transistor have positive threshold voltages, and
during a read operation, the first control circuit supplies a power supply voltage to the gates of the first transistor and the second transistor.
6. A semiconductor memory device comprising:
a memory cell which includes a variable resistance element;
a reference signal generation circuit configured to generate a reference signal;
a sense amplifier including a first input terminal and a second input terminal;
a first transistor configured to electrically couple the memory cell and the first input terminal of the sense amplifier;
a second transistor configured to electrically couple the reference signal generation circuit and the second input terminal of the sense amplifier;
a first control circuit configured to supply a voltage to gates of the first transistor and the second transistor;
a second control circuit configured to supply a first voltage except 0V to a back gate of the first transistor; and
a third control circuit configured to supply a second voltage except 0V to a back gate of the second transistor,
wherein:
the first transistor and the second transistor have negative threshold voltages, and
during a read operation, the first control circuit supplies a ground voltage to the gates of the first transistor and the second transistor.
7. A semiconductor memory device comprising:
a memory cell which includes a variable resistance element;
a reference signal generation circuit configured to generate a reference signal;
a sense amplifier including a first input terminal and a second input terminal;
a first transistor configured to electrically couple the reference signal generation circuit and the first input terminal of the sense amplifier;
a first control circuit configured to supply a voltage to a gate of the first transistor; and
a second control circuit configured to supply a first voltage except 0V to a back gate of the first transistor,
wherein the second control circuit comprises:
a first operational amplifier configured to compare a second voltage which has temperature dependency and a third voltage based on the first voltage, and configured to output a fourth voltage based on a result of the comparison;
a negative voltage generation pump configured to operate in accordance with the fourth voltage;
a second operational amplifier configured to compare the second voltage and a fifth voltage based on the first voltage, and to output a sixth voltage based on a result of the comparison; and
a third transistor having a gate supplied with the sixth voltage.
8. The device of claim 7 , wherein the second control circuit is configured to supply the first voltage such that the first voltage has temperature dependency.
9. The device of claim 7 , wherein:
the first transistor has positive threshold voltage, and
during a read operation, the first control circuit supplies a power supply voltage to the gate of the first transistor.
10. The device of claim 7 , further comprising a second transistor configured to electrically couple the memory cell and the second input terminal of the sense amplifier,
wherein in a read operation, a fixed voltage is supplied to a back gate of the second transistor.