Magnetic storage device
According to an embodiment, a magnetic storage device includes a semiconductor region including a trench; a gate electrode disposed in the trench; an insulation film covering the gate electrode and provided in a manner to fill the trench; and a magnetoresistive effect element including at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, the non-magnetic layer in a side surface of the magnetoresistive effect element including the non-magnetic layer being provided on a top surface of the insulation film.
1. A magnetic storage device comprising:
a first semiconductor region;
a magnetoresistive effect element which is disposed on a top surface of the first semiconductor region and in which at least a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer are stacked;
a second semiconductor region disposed on the top surface of the first semiconductor region and disposed on an outer side surface of the magnetoresistive effect element;
an insulation region disposed on an outer side surface of the second semiconductor region;
a conductive region disposed on an outer side surface of the insulation region; and
a third semiconductor region disposed on top surfaces of the magnetoresistive effect element and the second semiconductor region.
2. The magnetic storage device of claim 1 , wherein:
the magnetic storage device comprises a plurality of memory cells,
each of the plurality of memory cells includes the first semiconductor region, the magnetoresistive effect element, the second semiconductor region, the insulation region, the conductive region, and the third semiconductor region, and
the conductive region of one of two neighboring memory cells of the plurality of memory cells is the conductive region of the other of the two neighboring memory cells.
3. The magnetic storage device of claim 1 , wherein:
the magnetic storage device comprises a plurality of memory cells,
each of the plurality of memory cells includes the first semiconductor region, the magnetoresistive effect element, the second semiconductor region, the insulation region, the conductive region, and the third semiconductor region, and
the first semiconductor region of one of two neighboring memory cells of the plurality of memory cells is the third semiconductor region of the other of the two neighboring memory cells.
4. The magnetic storage device of claim 3 , further comprising:
a first conductive film,
a second conductive film, and
a transistor including:
a fourth semiconductor region;
a fifth semiconductor region disposed on a top surface of the fourth semiconductor region;
a second insulation region disposed on an outer side surface of the fifth semiconductor region;
a second conductive region disposed on an outer side surface of the second insulation region; and
a sixth semiconductor region disposed on a top surface of the fifth semiconductor region,
wherein the fourth semiconductor region of the transistor is the third semiconductor region of a first memory cell of the plurality of memory cells,
wherein the first conductive film is in contact with a top surface of the sixth semiconductor region, and
wherein the second conductive film is in contact with a bottom surface of the first semiconductor region of a second memory cell of the plurality of the memory cells.