Systems and methods for producing flat surfaces in interconnect structures
View Patent ↗In interconnect fabrication (e.g. a damascene process), a conductive layer is formed over a substrate with holes, and is polished to provide interconnect features in the holes. To prevent erosion/dishing of the conductive layer at the holes, the conductive layer is covered by a sacrificial layer (possibly conformal) before polishing; then both layers are polished. Initially, before polishing, the conductive layer and the sacrificial layer are recessed over the holes, but the sacrificial layer is polished at a lower rate to result in a protrusion of the conductive layer at a location of each hole. The polishing can continue to remove the protrusions and provide a planar surface.
1. A method for fabricating an apparatus comprising one or more semiconductor devices, the method comprising:
obtaining a substrate comprising one or more holes;
forming a conductive layer over the substrate, the conductive layer extending into each said hole to provide in each said hole at least a part of an interconnect structure in the apparatus, a top surface of the conductive layer having a recess over each said hole, wherein over each said hole, the corresponding recess extends downward from an adjacent area of a top surface of the conductive layer, the adjacent area laterally surrounding a bottom of the recess;
forming a sacrificial layer covering the conductive layer; and
removing at least a portion of the sacrificial layer and a portion of the conductive layer to form a protrusion of the conductive layer at a location of each said recess over the corresponding hole, wherein over each said hole, the corresponding protrusion extends upward from an adjacent area of the top surface of the conductive layer, the adjacent area laterally surrounding a top of the protrusion.
2. The method of claim 1 wherein said removing comprises a polishing process which removes the sacrificial layer and a portion of the conductive layer and forms each said protrusion of the conductive layer.
3. The method of claim 2 wherein in forming each said protrusion, the polishing process removes the conductive layer around each said protrusion.
4. The method of claim 2 wherein at a start of the polishing process, the sacrificial layer is recessed over each said recess of the conductive layer.
5. The method of claim 2 further comprising continuing the polishing process to reduce each said protrusion.
6. The method of claim 2 further comprising continuing the polishing process to eliminate each said protrusion and provide a planar surface at a location of each said protrusion.
7. The method of claim 2 wherein the polishing process comprises a stage at which the sacrificial layer has been removed around each said hole but not over each said hole.
8. The method of claim 7 wherein at said stage of the polishing process, the sacrificial layer is recessed over each said hole.
9. The method of claim 7 wherein at said stage, the conductive layer has been partially removed around each said hole.
10. The method of claim 1 wherein at a start of said removing, the sacrificial layer is conformal.
11. The method of claim 1 further comprising forming a barrier layer over the substrate and in each said hole prior to forming the conductive layer.
12. The method of claim 1 wherein each said hole comprises at least one of a through hole through the substrate and a recess in the substrate.
13. The method of claim 1 wherein at a conclusion of the forming of the conductive layer with the recess over each said hole, the recess extends downward from the adjacent area of the top surface of the conductive layer, the adjacent area overlying the hole.
14. The method of claim 1 wherein at a conclusion of said removing, the protrusion over each said hole extends upward from the adjacent area of the top surface of the conductive layer, the adjacent area overlying the hole.
15. A method for fabricating an apparatus comprising one or more semiconductor devices, the method comprising:
obtaining a substrate comprising one or more holes;
forming a conductive layer over the substrate, the conductive layer extending into each said hole to provide in each said hole at least a part of an interconnect structure in the apparatus;
forming a sacrificial layer covering the conductive layer, a top surface of the sacrificial layer having a recess over each said hole, wherein over each said hole, the corresponding recess extends downward from an adjacent area of a top surface of the sacrificial layer, the adjacent area laterally surrounding a bottom of the recess; and
removing at least a portion of the sacrificial layer and a portion of the conductive layer to form a protrusion of the conductive layer at a location of each said recess over the corresponding hole, wherein over each said hole, the corresponding protrusion extends upward from an adjacent area of the top surface of the conductive layer, the adjacent area laterally surrounding a top of the protrusion.
16. The method of claim 15 wherein said removing comprises a polishing process which removes the sacrificial layer and a portion of the conductive layer and forms each said protrusion of the conductive layer.
17. The method of claim 16 wherein in forming each said protrusion, the polishing process removes the conductive layer around each said protrusion.
18. The method of claim 16 further comprising continuing the polishing process to reduce each said protrusion.
19. The method of claim 16 further comprising continuing the polishing process to eliminate each said protrusion and provide a planar surface at a location of each said protrusion.
20. The method of claim 16 wherein the polishing process comprises a stage at which the sacrificial layer has been removed around each said hole but not over each said hole.
21. The method of claim 20 wherein at said stage of the polishing process, the conductive layer and the sacrificial layer are recessed over each said hole.
22. The method of claim 20 wherein at said stage, the conductive layer has been partially removed around each said hole.
23. The method of claim 15 wherein at a start of said removing, the sacrificial layer is conformal.
24. The method of claim 15 wherein each said hole comprises at least one of a through hole through the substrate and a recess in the substrate.
25. The method of claim 15 wherein at a conclusion of the forming of the sacrificial layer with the recess over each said hole, the recess extends downward from the adjacent area of the top surface of the sacrificial layer, the adjacent area overlying the hole.
26. The method of claim 15 wherein at a conclusion of said removing, the protrusion over each said hole extends upward from the adjacent area of the top surface of the conductive layer, the adjacent area overlying the hole.