IP Library Granted Patent US 10,205,087
Granted Patent B2
US 10,205,087 · App. 15/066,266 · Granted Feb 12, 2019

Semiconductor device

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Quick Facts
Patent No.
US 10,205,087
App. No.
15/066,266
Granted
Feb 12, 2019
Kind
B2
Abstract

A semiconductor device has a magnetic sensor configured to detect a direction of magnetism. The magnetic sensor includes Hall elements arranged on a surface of a semiconductor substrate, and a magnetic flux concentrator formed of a magnetic material having the function of amplifying magnetism. The magnetic flux concentrator is arranged on the semiconductor substrate and at least partly covers each of the Hall elements. A slit or a slot is formed in the magnetic material to inhibit generation of stress applied to the Hall elements.

Claims (24)

1. A semiconductor device having a magnetic sensor, the magnetic sensor comprising:

Hall elements arranged on a surface of a semiconductor substrate; and

a magnetic flux concentrator disposed over the semiconductor substrate and at least partly covering each of the Hall elements, the magnetic flux concentrator having no terminals for electrically connecting the magnetic flux concentrator to another element and having at least one through-opening in the shape of an elongated slot that extends partway across the magnetic flux concentrator and that does not completely divide the magnetic flux concentrator into separate parts, the slot having a width of 1 μm to 50 μm and being configured to reduce stress applied to the Hall elements.

2. A semiconductor device according to claim 1 , wherein the slot extends inwardly to the center portion from the outer edge of opposite sides of the magnetic flux concentrator.

3. A semiconductor device according to claim 1 , wherein the at least one through-opening comprises a plurality of through-openings each in the shape of a slot.

4. A semiconductor device according to claim 3 , wherein the slots do not extend to a center portion of the magnetic flux concentrator.

5. A semiconductor device according to claim 4 , wherein the slots have a linear shape.

6. A semiconductor device according to claim 1 , wherein the magnetic flux concentrator is made of a soft magnetic material.

7. A semiconductor device according to claim 6 , wherein the soft magnetic material is permalloy, mu-metal, metal glass or supermalloy.

8. A semiconductor device having a magnetic sensor, the magnetic sensor comprising:

Hall elements arranged on a surface of a semiconductor substrate; and

a magnetic flux concentrator disposed over the semiconductor substrate and at least partly covering each of the Hall elements, the magnetic flux concentrator having no terminals for electrically connecting the magnetic flux concentrator to another element and having at least one through-opening in the shape of a slot that extends inwardly from an outer edge of the magnetic flux concentrator at least partway across the magnetic flux concentrator, the slot having a width of 1 μm to 50 μm and being configured to reduce stress applied to the Hall elements.

9. A semiconductor device according to claim 8 , wherein the slot extends inwardly from the outer edge to a center portion of the magnetic flux concentrator.

10. A semiconductor device according to claim 9 , wherein the slot extends inwardly to the center portion from the outer edge of opposite sides of the magnetic flux concentrator.

11. A semiconductor device according to claim 8 , wherein the slot extends inwardly from the outer edge at opposite sides of the magnetic flux concentrator.

12. A semiconductor device according to claim 8 , wherein the magnetic flux concentrator has a circular shape.

13. A semiconductor device according to claim 8 , wherein the magnetic flux concentrator has a quadrangular shape.

14. A semiconductor device according to claim 8 , wherein the slot has a linear shape.

15. A semiconductor device according to claim 8 , wherein the magnetic flux concentrator is made of a soft magnetic material.

16. A semiconductor device according to claim 15 , wherein the soft magnetic material is permalloy, mu-metal, metal glass or supermalloy.

17. A semiconductor device having a magnetic sensor, the magnetic sensor comprising:

Hall elements arranged on a surface of a semiconductor substrate; and

a magnetic flux concentrator disposed over the semiconductor substrate and at least partly covering each of the Hall elements, the magnetic flux concentrator having at least one through-opening in the shape of a slot that has a width of 1 μm to 50 μm and extends inwardly from an outer edge of the magnetic flux concentrator at least partway across the magnetic flux concentrator, and the magnetic flux concentrator being made of a soft magnetic material and not being electrically connected to any other element so that no current flows through the magnetic flux concentrator during use of the semiconductor device.

18. A semiconductor device according to claim 17 , wherein the slot extends inwardly to the center portion from the outer edge of opposite sides of the magnetic flux concentrator.

Assignments (2)
CHANGE OF NAME Recorded Mar 12, 2018
From: SII SEMICONDUCTOR CORPORATION
To: ABLIC INC.
Reel/Frame 045567/0927 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 10, 2016
From: EBIHARA, MIKA
To: SII SEMICONDUCTOR CORPORATOIN
Reel/Frame 037946/0311 →