Power semiconductor rectifier with controllable on-state voltage
View Patent ↗It is the object of the invention to provide a power semiconductor rectifier with a low on-state-voltage and high blocking capability. The object is attained by a power semiconductor rectifier comprising: a drift layer having a first conductivity type; and an electrode layer forming a Schottky contact with the drift layer, wherein the drift layer includes a base layer having a peak net doping concentration, below 1·10 16 cm −3 and a barrier modulation layer which is in direct contact with the electrode layer to form at least a part of the Schottky contact, wherein a net doping concentration of the barrier modulation layer is in a range between 1·10 16 cm −3 and 1·10 19 cm −3 and wherein the barrier modulation layer has a layer thickness in a direction vertical to the interface between the electrode layer and the barrier modulation, layer of at least 1 nm and less than 0.2 μm.
1. Power semiconductor rectifier comprising:
a drift layer having a first conductivity type; and
an electrode layer forming a Schottky contact with the drift layer,
wherein the drift layer includes a base layer having a peak net doping concentration below 1·10 16 cm −3,
wherein the drift layer includes a barrier modulation layer which is in direct contact with the electrode layer to form at least a part of the Schottky contact, wherein a net doping concentration of the barrier modulation layer is in a range between 1·10 16 cm −3 and 1·10 19 cm −3 ,
the barrier modulation layer has a layer thickness in a direction vertical to the interface between the electrode layer and the barrier modulation layer of at least 1 nm and less than 0.2 μm.
2. Power semiconductor rectifier according to claim 1 , wherein the base layer has a peak net doping concentration in a range between 8·10 14 cm −3 and 6·10 15 cm −3 .
3. Power semiconductor rectifier according to claim 1 ,
wherein the net doping concentration of the barrier modulation layer is in a range between 5·10 16 cm −3 and 1·10 19 cm −3 .
4. Power semiconductor rectifier according to claim 3 , wherein the net doping concentration of the barrier modulation layer is in a range between 1·10 17 cm −3 and 5·10 18 cm −3 .
5. Power semiconductor rectifier according to claim 1 , wherein the electrode layer penetrates through the barrier modulation layer to be in direct contact with the base layer, and
wherein the contact between the electrode layer and the base layer is a first-barrier Schottky contact and the contact between the electrode layer and the barrier modulation layer is a second-barrier Schottky contact, the Schottky barrier height of the first-barrier Schottky contact being higher than that of the second-barrier Schottky contact.
6. Power semiconductor rectifier according to claim 5 , wherein the drift layer has a first main side and a second main side parallel to the first main side, wherein the first-barrier Schottky contact includes a plurality of first-barrier Schottky contact sections, wherein the second-barrier Schottky contact includes a plurality of second-barrier Schottky contact sections, and wherein the first-barrier Schottky contact sections alternate with the second-barrier Schottky contact sections in at least one lateral direction parallel to the first main side.
7. Power semiconductor rectifier according to claim 6 , wherein the first-barrier Schottky contact sections form a grid or honeycomb structure.
8. Power semiconductor rectifier according to claim 1 , further comprising a plurality of emitter regions, wherein:
each emitter region has a second conductivity type different from the first conductivity type,
the electrode layer forms an ohmic contact with each one of the emitter regions, and
each emitter region forms a pn-junction with the base layer.
9. Power semiconductor rectifier according to claim 1 , wherein the drift layer is made of silicon carbide.
10. Method for manufacturing a power semiconductor rectifier, the method comprising:
forming a drift layer by forming a stack of a base layer and of a barrier modulation layer, wherein the base layer has a first conductivity type and has a peak net doping concentration below 1·10 16 cm −3 , and wherein the barrier modulation layer has the first conductivity type, has a net doping concentration in a range between 1·10 16 cm −3 and 1·10 19 cm −3 and has layer thickness of at least 1 nm and less than 0.2 μm; and
forming an electrode layer on the barrier modulation layer to form a Schottky contact with the barrier modulation layer.
11. Method for manufacturing a power semiconductor rectifier according to claim 10 , the method further comprising, before the forming the electrode layer, forming at least one trench or hole into the drift layer, the trench or hole penetrating through the barrier modulation layer and extending into the base layer.
12. Method for manufacturing a power semiconductor rectifier according to claim 11 , the method further comprising forming an emitter region at least at the bottom portion of the at least one trench or hole before the step of forming the electrode layer, wherein the emitter region has a second conductivity type different from the first conductivity type and forms a pn-junction with the drift layer, and wherein the electrode layer forms an ohmic contact with the emitter region.
13. Method for manufacturing a power semiconductor rectifier according to claim 12 , wherein the emitter region is formed by depositing a semiconductor layer of the second conductivity type into the at least one trench or hole.
14. Method for manufacturing a power semiconductor rectifier according to claim 12 , wherein the emitter region is formed by implanting a dopant of the second conductivity type into the drift layer at least at the bottom portion of the at least one trench or hole.
15. Method for manufacturing a power semiconductor rectifier according to claim 11 , wherein the electrode layer is formed in the at least one trench or hole to form a Schottky contact with the base layer.
16. Power semiconductor rectifier according to claim 1 , wherein the drift layer is made of silicon.
17. Power semiconductor rectifier according to claim 2 , wherein the net doping concentration of the barrier modulation layer is in a range between 5·10 16 cm −3 and 1·10 19 cm −3 .
18. Power semiconductor rectifier according to claim 2 , wherein the electrode layer penetrates through the barrier modulation layer to be in direct contact with the base layer, and
wherein the contact between the electrode layer and the base layer is a first-barrier Schottky contact and the contact between the electrode layer and the barrier modulation layer is a second-barrier Schottky contact, the Schottky barrier height of the first-barrier Schottky contact being higher than that of the second-barrier Schottky contact.
19. Power semiconductor rectifier according to claim 3 , wherein the electrode layer penetrates through the barrier modulation layer to be in direct contact with the base layer, and
wherein the contact between the electrode layer and the base layer is a first-barrier Schottky contact and the contact between the electrode layer and the barrier modulation layer is a second-barrier Schottky contact, the Schottky barrier height of the first-barrier Schottky contact being higher than that of the second-barrier Schottky contact.
20. Power semiconductor rectifier according to claim 2 , further comprising a plurality of emitter regions, wherein:
each emitter region has a second conductivity type different from the first conductivity type,
the electrode layer forms an ohmic contact with each one of the emitter regions, and
each emitter region forms a pn-junction with the base layer.