Magnetoresistive memory device and manufacturing method of the same
View Patent ↗According to one embodiment, a magnetoresistive memory device includes bottom electrodes provided on a substrate, a magnetoresistive element provided on each of the bottom electrodes, a top electrode provided on each of the magnetoresistive elements, an insulating film provided on sides of the bottom electrode, the magnetoresistive element and, the top electrode, and a magnetic layer provided on the top electrode, the magnetic layer extending on the insulating film to connect a plurality of those of the top electrodes.
1. A magnetoresistive memory device comprising:
a plurality of bottom electrodes provided on a substrate;
a plurality of magnetoresistive elements each provided on a corresponding one of the plurality of bottom electrodes;
a plurality of contact plugs each provided on a corresponding one of the plurality of magnetoresistive elements;
an insulating film provided on sides of the plurality of bottom electrodes, the plurality of magnetoresistive elements and the plurality of contact plugs; and
a shift-adjustment layer provided on the plurality of contact plugs, the shift-adjustment layer extending on the insulating film to interconnect the plurality of contact plugs,
wherein the shift-adjustment layer has an artificial lattice of alternately laminated Co and Pt or an artificial lattice of alternately laminated Co and Pd, and the shift-adjustment layer suppresses a stray magnetic field in the plurality of magnetoresistive elements.
2. The device of claim 1 , wherein the shift-adjustment layer contains one of Co, Fe and Ni.
3. The device of claim 1 , wherein the shift-adjustment layer contains an alloy of CoPt or an alloy of CoFe.
4. The device of claim 1 , wherein each of the plurality of magnetoresistive elements has a stacked layer structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first and second magnetic layers.
5. The device of claim 1 , wherein each of the plurality of magnetoresistive elements is an MTJ element which includes:
a first magnetic material layer,
a second magnetic material layer,
a nonmagnetic material layer between the first magnetic material layer and the second magnetic material layer, and
a third magnetic material layer on a side of the first magnetic material layer opposite to a side thereof interfacing the nonmagnetic material layer or on a side of the second magnetic material layer opposite to a side thereof interfacing the nonmagnetic material layer.
6. The device of claim 1 , wherein a metal film is provided on the shift-adjustment layer.
7. The device of claim 6 , wherein the metal film has a conductive rate higher than that of a material of the shift-adjustment layer.
8. The device of claim 1 , wherein the insulating film comprises a first insulating film provided on the sides of the plurality of bottom electrodes, and a second insulating film provided on the sides of the plurality of magnetoresistive elements and the plurality of contact plugs.
9. The device of claim 8 , wherein:
the first and second insulating films are oxide films, and
the device further comprises a nitride film provided between the first insulating film and the second insulating film and on side surfaces of the plurality of magnetoresistive elements.
10. A magnetoresistive memory device comprising:
a plurality of bottom electrodes provided on a substrate;
a plurality of magnetoresistive elements each provided on a corresponding one of the plurality of bottom electrodes;
an insulating film provided on sides of the plurality of bottom electrodes and the plurality of magnetoresistive elements; and
a shift-adjustment layer provided on the plurality of magnetoresistive elements, the shift-adjustment layer extending on the insulating film to interconnect the plurality of magnetoresistive elements,
wherein the shift-adjustment layer has an artificial lattice of alternately laminated Co and Pt or an artificial lattice of alternately laminated Co and Pd, and the shift-adjustment layer suppresses a stray magnetic field in the plurality of magnetoresistive elements.
11. The device of claim 10 , wherein the shift-adjustment layer contains an alloy of CoPt or an alloy of CoFe.
12. The device of claim 10 , wherein each of the plurality of magnetoresistive elements has a stacked layer structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first and second magnetic layers.
13. The device of claim 10 , wherein each of the plurality of magnetoresistive elements is an MTJ element which includes:
a first magnetic material layer,
a second magnetic material layer,
a nonmagnetic material layer between the first magnetic material layer and the second magnetic material layer, and
a third magnetic material layer on a side of the first magnetic material layer opposite to a side thereof interfacing the nonmagnetic material layer or on a side of the second magnetic material layer opposite to a side thereof interfacing the nonmagnetic material layer.
14. The device of claim 10 , wherein a metal film is provided on the shift-adjustment layer.