Light-emitting device
View Patent ↗A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.
1. A light-emitting device, comprising:
a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface;
a first electrode formed on the upper surface of the mesa;
a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses;
a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode;
a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode;
a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and
a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.
2. The light-emitting device according to claim 1 , further comprising a substrate on the light-emitting semiconductor stack.
3. The light-emitting device according to claim 1 , wherein the light-emitting semiconductor stack comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, wherein the plurality of recesses penetrate through the active layer.
4. The light-emitting device according to claim 3 , wherein the bottom surface of the plurality of recesses exposes the first conductive type semiconductor layer, and the upper surface of the mesa is a surface of the second conductive type semiconductor layer.
5. The light-emitting device according to claim 1 , wherein the first electrode pad is formed on the plurality of recesses.
6. The light-emitting device according to claim 1 , wherein the first electrode comprises a first layer and a second layer, the first layer comprising a first conductive material and the second layer comprising a second conductive material different from the first conductive material.
7. The light-emitting device according to claim 6 , wherein the second conductive material comprises a material comprising an element selected from a group consisting of Ni, Al, Cu, Cr, and Ti.
8. The light-emitting device according to claim 1 , wherein the second insulating layer comprises a material different from that of the first insulating layer.
9. The light-emitting device according to claim 8 , wherein a material of the second insulating layer comprises silicon oxide, silicon nitride, aluminum oxide, zirconium oxide, or titanium oxide.
10. The light-emitting device according to claim 1 , wherein the second insulating layer is formed on the first insulating layer at a position corresponding to a position of the first insulating layer.
11. The light-emitting device according to claim 1 , wherein the second insulating layer is between the first electrode and the first electrode pad.
12. The light-emitting device according to claim 1 , wherein the first electrode pad is formed on the second insulating layer and contacts with the first electrode through the plurality of spaces.
13. The light-emitting device according to claim 1 , wherein the first insulating layer is formed in each of the plurality of recesses and on a part of the upper surface of the mesa.
14. The light-emitting device according to claim 1 , wherein the second insulating layer directly contacts the first insulating layer.
15. The light-emitting device according to claim 1 , wherein the second insulating layer comprises a plurality of openings to expose the plurality of passages formed under the second electrode pad.
16. The light-emitting device according to claim 15 , wherein the second electrode pad contacts with the plurality of second electrode through the plurality of openings of the second insulating layer and through the plurality of passages of the first insulating layer.
17. The light-emitting device according to claim 1 , further comprising a conductive type contact layer formed on the second conductive type semiconductor layer, wherein the conductive type contact layer comprises indium tin oxide, cadmium tin oxide, antimony tin oxide, indium zinc oxide, aluminum zinc oxide, or zinc tin oxide.
18. The light-emitting device according to claim 1 , wherein the plurality of spaces of the second insulating layer is separated from each other.