Magnetoresistive element and magnetic memory
View Patent ↗A magnetoresistive element according to an embodiment includes: a first layer containing nitrogen; a reference layer opposed to the first layer, the reference layer having a magnetization perpendicular to a face thereof opposed to the first layer, the magnetization of the reference layer being fixed; a storage layer disposed between the first layer and the reference layer, the storage layer having a magnetization perpendicular to a face thereof opposed to the first layer, the magnetization of the storage layer being changeable, and the storage layer including a second layer containing boron, and a third layer disposed between the second layer and the reference layer and containing boron, a boron concentration of the third layer being lower than a boron concentration of the second layer; and an intermediate layer disposed between the third layer and the reference.
1. A magnetoresistive element comprising:
a first layer comprising nitrogen;
a first magnetic layer;
a second magnetic layer disposed between the first layer and the first magnetic layer; and
an intermediate layer disposed between the first magnetic layer and the second magnetic layer,
wherein the second magnetic layer comprises a second layer comprising boron and a third layer disposed between the second layer and the intermediate layer and comprising boron, and the second layer is in contact with the first layer, and
wherein a boron concentration of the third layer is lower than a boron concentration of the second layer.
2. A magnetoresistive element comprising:
a first layer comprising nitrogen;
a first magnetic layer;
a second magnetic layer disposed between the first layer and the first magnetic layer; and
an intermediate layer disposed between the first magnetic layer and the second magnetic layer,
wherein the second magnetic layer comprises a second layer comprising boron, a third layer disposed between the second layer and the intermediate layer and comprising boron, and a fourth layer disposed between the second layer and the first layer and comprising boron, and the fourth layer is in contact with the first layer, and
wherein a boron concentration of the third layer is lower than a boron concentration of the second layer, and a boron concentration of the fourth layer is lower than the boron concentration of the second layer.
3. The element according to claim 2 , further comprising a fifth layer comprising at least one of Hf, Zr, Al, Be, Mg, Ca, Sr, Ba, Sc, Y, and La, and wherein the first layer is disposed between the fifth layer and the fourth layer.
4. The element according to claim 3 , wherein the first layer further comprises at least one of Al, Sc, Y, and La and has a thickness of 0.2 nm or more and 2 nm or less.
5. The element according to claim 2 , wherein
the second layer comprises CoFeHfB, and
the third layer comprises CoFeB.
6. A magnetoresistive element comprising:
a first magnetic layer;
a multilayer structure comprising a first layer comprising nitrogen, and a second layer comprising boron, the second layer being in contact with the first layer and the second layer being between the first layer and the first magnetic layer;
a second magnetic layer disposed between the second layer and the first magnetic layer, the second magnetic layer having a boron concentration lower than a boron concentration of the second layer; and
an intermediate layer disposed between the second magnetic layer and the first magnetic layer.
7. The element according to claim 6 , wherein
the multilayer structure further comprises a third layer comprising at least one of Hf, Zr, Al, Be, Mg, Ca, Sr, Ba, Sc, Y, and La, and
the first layer is between the third layer and the second layer.
8. The element according to claim 6 , wherein the second layer has a thickness of 1 nm or less.
9. A magnetoresistive element, comprising:
a first layer comprising at least one of AlInN, AlYN and AlLaN;
a first magnetic layer;
a second magnetic layer disposed between the first layer and the first magnetic layer; and
an intermediate layer disposed between the first magnetic layer and the second magnetic layer.
10. The element according to claim 9 , further comprising a second layer comprising at least one of Hf, Zr, Al, Be, Mg, Ca, Sr, Ba, Sc, Y, and La, and wherein the first layer is disposed between the second layer and the second magnetic layer.
11. The element according to claim 9 , wherein the first layer has a thickness of 0.2 nm or more and 2 nm or less.
12. A magnetic memory, comprising:
the magnetoresistive element according to claim 2 ;
a first wiring line electrically connected to the first magnetic layer; and
a second wiring electrically connected to the second magnetic layer.
13. The memory according to claim 12 , further comprising a fifth layer comprising at least one of Hf, Zr, Al, Be, Mg, Ca, Sr, Ba, Sc, Y, and La, and wherein the first layer is disposed between the fifth layer and the second layer.
14. The memory according to claim 13 , wherein the first layer further comprises at least one of Al, Sc, Y, and La and has a thickness of 0.2 nm or more and 2 nm or less.
15. The memory according to claim 12 , wherein
the second layer comprises CoFeHfB, and
the third layer comprises CoFeB.
16. The element according to claim 6 , wherein
the first layer further comprises at least one of Al, Sc, Y, and La, and
the second layer comprises HfB.
17. The element according to claim 9 , wherein the second magnetic layer comprises boron.
18. The element according to claim 17 , wherein the second magnetic layer is in contact with the first layer.
19. A magnetic memory comprising:
the magnetoresistive element according to claim 16 ;
a first wiring electrically connected to the first magnetic layer; and
a second wiring electrically connected to the second magnetic layer.