Magnetoresistive memory device and manufacturing method of the same

1. A magnetoresistive memory device comprising:

first electrodes located in an interlayer insulating film;

second electrodes located on the respective first electrodes within the interlayer insulating film;

magnetoresistive effect elements on the respective second electrodes; and

third electrodes on the respective magnetoresistive effect elements;

wherein the first electrodes and the second electrodes are displaced from each other, and

wherein each of the second electrodes comprises a side surface and an under surface located as high as an under surface of a corresponding one of the first electrodes, and is connected at the side surface to the corresponding one of the first electrodes.

2. The device of claim 1 , wherein each of the magnetoresistive effect elements has a stacked layer structure comprising a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first and second magnetic layers.

3. The device of claim 2 , wherein the first magnetic layer is a storage layer variable in magnetization direction, the second magnetic layer is a reference layer fixed in magnetization direction, and the nonmagnetic layer is a tunnel barrier layer.

4. A magnetoresistive memory device comprising:

a semiconductor substrate including switching transistors provided thereon;

an interlayer insulating film on the semiconductor substrate;

first electrodes located in the interlayer insulating film and each connected to a portion of a corresponding one of the transistors;

second electrodes located in the interlayer insulating film and connected to the respective first electrodes;

magnetoresistive effect elements on the respective second electrodes;

third electrodes on the respective magnetoresistive effect elements; and

bit lines, each connecting some of the third electrodes together,

wherein each of the first electrodes is arranged to deviate from an installation position of a corresponding one of the magnetoresistive effect elements along an axis perpendicularly intersecting a corresponding one of the bit lines, and is connected by an under surface thereof to the portion of the corresponding one of the transistors,

wherein each of the second electrodes is provided according to the installation position of a corresponding one of the magnetoresistive effect elements, and is arranged between the corresponding one of the magnetoresistive effect elements and a corresponding one of the first electrodes and is connected by a side surface thereof, to the corresponding one of the first electrodes, and

wherein each of the second electrodes comprises an under surface that reaches a surface of the semiconductor substrate, and the under surface of each of the second electrodes is connected to a portion of a corresponding one of the transistors.

5. The device of claim 4 , wherein each of the magnetoresistive effect elements has a stacked layer structure comprising a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first and second magnetic layers.

6. The device of claim 5 , wherein the first magnetic layer is a storage layer variable in magnetization direction, the second magnetic layer is a reference layer fixed in magnetization direction, and the nonmagnetic layer is a tunnel barrier layer.

7. The device of claim 4 , further comprising source contacts located in the interlayer insulating film, each connected to another portion of a corresponding one of the transistors.

8. The device of claim 7 , wherein each of the first electrodes is connected to a drain of the corresponding one of the transistors, and each of the source contacts is connected to a source of the corresponding one of the transistors.

9. The device of claim 7 , further comprising source lines, each connecting some of the source contacts together, wherein the bit lines and the source lines are alternately arranged in parallel at regular intervals.