Method of formulating perovskite solar cell materials
A method for preparing photoactive perovskite materials. The method comprises the step of preparing a lead halide precursor ink. Preparing a lead halide precursor ink comprises the steps of: introducing a lead halide into a vessel, introducing a first solvent to the vessel, and contacting the lead halide with the first solvent to dissolve the lead halide. The method further comprises depositing the lead halide precursor ink onto a substrate, drying the lead halide precursor ink to form a thin film, annealing the thin film, and rinsing the thin film with a second solvent and a salt.
1. A method comprising the steps of:
preparing a bismuth halide precursor ink, wherein preparing a bismuth halide precursor ink comprises the steps of:
introducing a bismuth halide into a vessel;
introducing a first solvent to the vessel; and
contacting the bismuth halide with the first solvent to dissolve the bismuth halide to form the bismuth halide precursor ink;
depositing the bismuth halide precursor ink onto a substrate;
drying the bismuth halide precursor ink to form a thin film;
annealing the thin film; and
rinsing the thin film with a second solvent and a salt selected from the group consisting of methylammonium halide, formamidinium halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.
2. The method of claim 1 , wherein annealing the thin film occurs for between about 5 to about 30 minutes at a temperature between about 40° C. to about 60° C.
3. The method of claim 1 , wherein the salt is selected from the group consisting of methylammonium iodide, formamidinium iodide, guanidinium iodide, 1,2,2-triaminovinylammonium iodide, and 5-aminovaleric acid hydroiodide.
4. The method of claim 1 , wherein the first solvent is selected from the group consisting of dry dimethylformamide, dimethylsulfoxide (DMSO), methanol, ethanol, propanol, butanol, tetrahydrofuran, formamide, pyridine, pyrrolidine, chlorobenzene, dichlorobenzene, dichloromethane, chloroform, and combinations thereof.
5. The method of claim 1 , wherein contacting the bismuth halide with the solvent to dissolve the bismuth halide occurs between about 20° C. to about 150° C.
6. The method of claim 1 , wherein contacting the bismuth halide with the solvent to dissolve the bismuth halide occurs at about 85° C.
7. The method of claim 1 , wherein the bismuth halide precursor ink has a concentration of the bismuth halide between about 0.001M and about 10M.
8. The method of claim 1 , wherein depositing the bismuth halide precursor ink onto the substrate occurs by drop casting, spin casting, slot-die printing, screen printing, or ink-jet printing.
9. The method of claim 1 , wherein annealing the thin film occurs for up to 24 hours at a temperature between about 20° C. to about 300° C.
10. The method of claim 1 , wherein annealing the thin film occurs for about ten minutes at a temperature of about 50° C.
11. The method of claim 1 , wherein the second solvent selected from the group consisting of dimethylformamide, isopropanol, methanol, ethanol, butanol, chloroform, chlorobenzene, dimethylsulfoxide, water, and combinations thereof.
12. The method of claim 1 , wherein the salt comprises formamidinium iodide.
13. The method of claim 12 , wherein the salt is dissolved in the second solvent in a concentration of between about 0.001M and about 10M.
14. The method of claim 1 , wherein the salt comprises methylammonium iodide.
15. The method of claim 1 , wherein rinsing the thin film comprises at least partial submersion in the second solvent.