Magnetic memory device including upper structure having first portion and second portion surrounding first portion and formed of material different from that of first portion, and method of manufacturing the same
View Patent ↗According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic layer, and an upper structure provided on the stacked structure, and including a first portion and a second portion surrounding the first portion and formed of material different from that of the first portion.
1. A magnetic memory device comprising:
a stacked structure including a magnetic layer;
an upper structure provided on the stacked structure, and including a first portion and a second portion surrounding the first portion, the second portion being formed of a material different from a material of the first portion;
a top electrode having a bottom end and a top end, the bottom end being connected to a top surface of the upper structure; and
a bit line connected to the top end of the top electrode,
wherein a side surface of the stacked structure is aligned with a side surface of the upper structure,
wherein the bottom end of the top electrode has a width greater than a width of a top end of the first portion, and
wherein the first portion is formed of a predetermined metal element, and the second portion is formed of carbide of the predetermined metal element.
2. The device of claim 1 , wherein the first portion is formed of a conductor.
3. The device of claim 1 , wherein the first portion is formed of metal or metal nitride.
4. The device of claim 1 , wherein the first portion is formed of tungsten (W), titanium (Ti), tungsten nitride or titanium nitride.
5. The device of claim 1 , wherein the second portion is formed of tungsten carbide or titanium carbide.
6. The device of claim 1 , wherein an upper corner of the upper structure is rounded.
7. The device of claim 1 , wherein the stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.
8. A magnetic memory device comprising:
a stacked structure including a magnetic layer;
an upper structure provided on the stacked structure, and including a first portion and a second portion surrounding the first portion, the second portion being formed of a material different from a material of the first portion;
a top electrode having a bottom end and a top end, the bottom end being connected to a top surface of the upper structure;
a bit line connected to the top end of the top electrode; and
a protective insulating film covering the stacked structure and the upper structure,
wherein a side surface of the stacked structure is aligned with a side surface of the upper structure,
wherein an upper corner of the second portion is rounded, and
wherein an upper part of the protective insulating film is rounded and has a hole, and an inner surface of the hole is in contact with a side surface of the top electrode.
9. The device of claim 8 , wherein the first portion is formed of a conductor.
10. The device of claim 8 , wherein the first portion is formed of metal or metal nitride.
11. The device of claim 8 , wherein the first portion is formed of tungsten (W), titanium (Ti), tungsten nitride or titanium nitride.
12. The device of claim 8 , wherein the second portion is formed of tungsten carbide, titanium carbide, silicon carbide, nitrogen carbide or diamond-like carbon (DLC).
13. A magnetic memory device comprising:
a stacked structure including a magnetic layer;
an upper structure provided on the stacked structure, and including a first portion and a second portion surrounding the first portion, the second portion being formed of a material different from a material of the first portion;
a top electrode having a bottom end and a top end, the bottom end being connected to a top surface of the upper structure; and
a bit line connected to the top end of the top electrode,
wherein a side surface of the stacked structure is aligned with a side surface of the upper structure,
wherein an upper corner of the second portion is rounded, and
wherein the first portion is formed of a predetermined metal element, and the second portion is formed of carbide of the predetermined metal element.
14. The device of claim 8 , wherein the stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.
15. The device of claim 13 , wherein the first portion is formed of a conductor.
16. The device of claim 13 , wherein the first portion is formed of metal or metal nitride.
17. The device of claim 13 , wherein the first portion is formed of tungsten (W), titanium (Ti), tungsten nitride or titanium nitride.
18. The device of claim 13 , wherein the second portion is formed of tungsten carbide or titanium carbide.
19. The device of claim 13 , wherein the stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.