Semiconductor device
View Patent ↗A semiconductor device includes a semiconductor layer, a first conductor film, a second conductor film, and a first protective film. The semiconductor layer has a semiconductor element. The first conductor film is formed on an upper surface of the semiconductor layer and is electrically connected to the semiconductor element. The second conductor film is formed on an outer side surface of the semiconductor layer and is electrically connected to the semiconductor element. The first protective film is formed on the first conductor film and has an opening to expose the first conductor film. A height from the upper surface of the semiconductor layer to an upper surface of the second conductor film is equal to or smaller than a height from the upper surface of the semiconductor layer to an upper surface of the first conductor film.
1. A face-down mounting type semiconductor device having a vertical type semiconductor element formed inside the face-down mounting type semiconductor device, the vertical type semiconductor element being configured to make a current flow between an upper surface terminal formed at an upper surface of the face-down mounting type semiconductor device and a lower surface terminal formed at a lower surface of the face-down mounting type semiconductor device which is opposite to the upper surface, the face-down mounting type semiconductor device comprising:
a semiconductor layer in which the vertical type semiconductor element is formed inside the semiconductor layer;
a first conductor film formed in direct contact with an upper surface of the semiconductor layer and constituting the upper surface terminal;
a second conductor film formed in direct contact with the semiconductor layer continuously between a position of a lower surface of the semiconductor layer and a position of the upper surface of the semiconductor layer at a side surface of the face-down mounting type semiconductor device and electrically connected to the lower surface terminal, the lower surface terminal being formed on the lower surface of the semiconductor layer; and
a first protective film formed on the first conductor film and having one or more openings to expose the first conductor film,
wherein:
both the first conductor film and the second conductor film are surface mounting terminals, and
a height from the upper surface of the semiconductor layer to an upper surface of the second conductor film is equal to or smaller than a height from the upper surface of the semiconductor layer to an upper surface of the first conductor film.
2. The face-down mounting type semiconductor device according to claim 1 , wherein:
the openings include a first opening and a second opening, and
an area of the first opening is equal to an area of the second opening.
3. The face-down mounting type semiconductor device according to claim 2 , wherein a perimeter of the first opening is equal to a perimeter of the second opening.
4. The face-down mounting type semiconductor device according to claim 1 , wherein:
the openings include a first opening and a second opening, and
a perimeter of the first opening is equal to a perimeter of the second opening.
5. The face-down mounting type semiconductor device according to claim 1 , wherein
the second conductor film has a plurality of recesses disposed apart from each other.
6. The face-down mounting type semiconductor device according to claim 1 , further comprising a third conductor film formed on the second conductor film, wherein
a level difference is formed between the second conductor film and the third conductor film.
7. The face-down mounting type semiconductor device according to claim 6 , wherein the third conductor film has a better wettability than the second conductor film, with respect to a connection material for connecting the face-down mounting type semiconductor device to a mounting substrate.
8. The face-down mounting type semiconductor device according to claim 1 , wherein:
the side surface of the face-down mounting type semiconductor device includes a first side surface and a second side surface opposite to the first side surface, and
the second conductor film is formed on the first side surface and the second side surface.
9. The face-down mounting type semiconductor device according to claim 1 , wherein:
the second conductor film is partially formed on the side surface, and
the side surface of the face-down mounting type semiconductor device has a region without the second conductor film being disposed.
10. The face-down mounting type semiconductor device according to claim 1 , wherein:
the vertical type semiconductor element is a field effect transistor,
the semiconductor device further comprises a fourth conductor film formed on the upper surface of the semiconductor layer and electrically connected to the vertical type semiconductor element,
the first conductor film serves as a source electrode, the second conductor film serves as a drain electrode, and the fourth conductor film serves as a gate electrode, and
the first conductor film is disposed between the second conductor film and the fourth conductor film in a planar view.
11. The face-down mounting type semiconductor device according to claim 10 , wherein the first conductor film surrounds the fourth conductor film in a planar view.
12. The face-down mounting type semiconductor device according to claim 1 , further comprising a contact region formed between the semiconductor layer and the second conductor film and having lower resistance than the semiconductor layer.
13. The face-down mounting type semiconductor device according to claim 1 , wherein the first protective film has a groove.
14. The face-down mounting type semiconductor device according to claim 1 , wherein the first conductor film is also disposed at the side surface of the face-down mounting type semiconductor device.
15. The face-down mounting type semiconductor device according to claim 1 , wherein the upper surface of the first conductor film is flush with the upper surface of the second conductor film.
16. The face-down mounting type semiconductor device according to claim 1 , further comprising a fifth conductor film formed in direct contact with the lower surface terminal and electrically connected to the second conductor film.
17. The face-down mounting type semiconductor device according to claim 16 , further comprising a second protective film for covering a lower surface of the fifth conductor film.
18. The face-down mounting type semiconductor device according to claim 17 , wherein:
a thickness of the first conductor film is equal to a thickness of the fifth conductor film, and
a thickness of the first protective film is equal to a thickness of the second protective film.
19. The face-down mounting type semiconductor device according to claim 1 , further comprising a third protective film for covering the second conductor film.
20. The face-down mounting type semiconductor device according to claim 1 , wherein:
the second conductor film covers an intersection of the upper surface of the face-down mounting type semiconductor device and the side surface of the face-down mounting type semiconductor device, and
an end of the second conductor film at the upper surface of the face-down mounting type semiconductor device is covered with the first protective film.