High frequency signal attenuators

1. An integrated circuit comprising:

a signal conductor configured to carry a radio frequency (RF) signal;

a shield conductor routed with the signal conductor and configured to receive a DC voltage, wherein the signal conductor and the shield conductor are disposed on different conductive layers of the integrated circuit; and

an attenuation circuit configured to provide a controllable amount of attenuation to the RF signal, wherein the attenuation circuit comprises a first shunt circuit connected between a signal tapping position of the signal conductor and a first shield tapping position of the shield conductor.

2. The integrated circuit of claim 1 , wherein the DC voltage is a ground voltage.

3. The integrated circuit of claim 1 , wherein the first shunt circuit comprises two or more field effect transistors (FETs) electrically connected in series.

4. The integrated circuit of claim 3 , wherein a transistor layout of the two or more FETs is implemented in a loop.

5. The integrated circuit of claim 4 , wherein a transistor layout of a first FET of the two or more FETs is positioned on a first side of the loop, and wherein a transistor layout of a second FET of the two or more FETs is positioned on a second side of the loop different from the first side.

6. The integrated circuit of claim 3 , wherein the two or more FETs are configured to receive a gate control voltage operable to control the amount of attenuation provided by the attenuation circuit.

7. The integrated circuit of claim 3 , wherein at least a portion of a transistor layout of the two or more FETs is positioned beneath the shield conductor.

8. The integrated circuit of claim 1 , wherein the signal tapping position and the first shield tapping position are separated by a distance of less than 100 μm.

9. The integrated circuit of claim 1 , wherein the shield conductor comprises an opening, wherein the integrated circuit further comprises a via that passes through the opening to electrically connect the first shunt circuit to the signal tapping position of the signal conductor.

10. The integrated circuit of claim 1 , wherein the integrated circuit is fabricated on a Silicon Germanium substrate or a Silicon substrate.

11. The integrated circuit of claim 1 , wherein the attenuation circuit further comprises a second shunt circuit electrically connected between the signal tapping position of the signal conductor and a second shield tapping position of the shield conductor, wherein the signal tapping position is located between the first shield tapping position and the second shield tapping position.

12. The integrated circuit of claim 11 , wherein the signal tapping position is substantially equidistance from the first shield tapping position and the second shield tapping position.

13. The integrated circuit of claim 11 , wherein the first shunt circuit comprises a first plurality of FETs in series, and the second shunt circuit comprises a second plurality of FETs in series.

14. The integrated circuit of claim 13 , wherein the second plurality of FETs are a replica of the first plurality of FETs.

15. The integrated circuit of claim 11 , wherein the shield conductor comprises an opening, wherein the integrated circuit further comprises a via that passes through the opening to electrically connect the first shunt circuit and the second shunt circuit to the signal tapping position of the signal conductor.

16. A voltage variable attenuator comprising:

an input terminal and an output terminal;

a signal conductor configured to carry a radio frequency (RF) signal along at least a portion of a signal path between the input terminal and the output terminal;

a shield conductor routed with the signal conductor and biased by a ground voltage; and

a shunt circuit directly connected between the signal conductor and the shield conductor, wherein the shunt circuit is configured to receive a control voltage that is operable to control an amount of attenuation provided to the RF signal.

17. The voltage variable attenuator of claim 16 , wherein the shunt circuit comprises two or more field effect transistors (FETs) electrically connected in series between a signal tapping point of the signal conductor and a shield tapping point of the shield conductor, wherein the two or more FETs are biased by the control voltage.

18. The voltage variable attenuator of claim 17 , wherein a transistor layout of the two or more field effect transistors (FETs) is implemented in a loop, wherein a transistor layout of a first FET of the two or more FETs is positioned on a first side of the loop, and wherein a transistor layout of a second FET of the two or more FETs is positioned on a second side of the loop different from the first side.

19. The voltage variable attenuator of claim 17 , wherein the signal tapping point and the shield tapping point are separated by a distance of less than 100 μm.

20. A semiconductor die comprising:

a signal conductor configured to carry a radio frequency (RF) signal;

a shield conductor configured to receive a ground voltage, wherein the signal conductor and the shield conductor are disposed on different conductive layers of the semiconductor die, wherein the shield conductor comprises an opening;

an attenuation circuit configured to provide a controllable amount of attenuation to the RF signal, wherein the attenuation circuit comprises a shunt circuit electrically connected between the signal conductor and the shield conductor, wherein at least a portion of a transistor layout of the shunt circuit is positioned beneath the shield conductor; and

a via that passes through the opening of the shield conductor to electrically connect the shunt circuit to the signal conductor.