Light-emitting device and the manufacturing method thereof

1. A method of manufacturing a light-emitting device, comprising:

providing a substrate;

forming a mask block contacting the substrate and exposing a portion of the substrate;

implanting an ion into the portion of the substrate to form an ion implantation region; and

forming a semiconductor stack on the substrate such that multiple cavities are formed between the semiconductor stack and the ion implantation region,

wherein the mask block comprises a material made of metal or oxide, and

wherein said forming the mask block comprises forming a metal film on the substrate and applying a heat treatment to the metal film to form multiple metal particles separated from each other.

2. The method of manufacturing a light-emitting device according to claim 1 , further comprising removing the mask block by etching.

3. The method of manufacturing a light-emitting device according to claim 1 , wherein a thickness of the metal film is smaller than 100 nm.

4. The method of manufacturing a light-emitting device according to claim 1 , wherein a particle size of one of the multiple metal particles is between 50 nm and 500 nm, and a gap between neighboring two of the metal particles is smaller than 1 μm.

5. The method of manufacturing a light-emitting device according to claim 1 , further comprising forming an oxide layer on the substrate before forming the metal film on the substrate.

6. The method of manufacturing a light-emitting device according to claim 5 , wherein a thickness of the oxide layer is smaller than 500 nm.

7. The method of manufacturing a light-emitting device according to claim 1 , wherein said forming the mask block comprises disposing multiple oxide particles on the substrate, and

wherein a particle size of one of the multiple oxide particles between 300 nm and 600 nm, and a gap between neighboring two of the oxide particles is smaller than 1 μm.

8. The method of manufacturing a light-emitting device according to claim 1 , further comprising forming a barrier section in the semiconductor stack.

9. The method of manufacturing a light-emitting device according to claim 8 , wherein the barrier section is formed of non-crystalline material.

10. The method of manufacturing a light-emitting device according to claim 8 , further comprising providing a MOCVD chamber,

wherein semiconductor stack and the barrier section are formed in the MOCVD chamber.

11. The method of manufacturing a light-emitting device according to claim 8 , wherein, after said forming the barrier section, said forming a semiconductor stack is resumed.

12. The method of manufacturing a light-emitting device according to claim 1 , further comprising a seed layer before said forming a semiconductor stack on the substrate.

13. The method of manufacturing a light-emitting device according to claim 12 , wherein the seed layer comprises AlN.

14. A method of manufacturing a light-emitting device, comprising:

providing a substrate;

forming a mask block contacting the substrate and exposing a portion of the substrate;

etching the portion of the substrate to form a concave region in the substrate;

implanting an ion into the portion of the substrate to form an ion implantation region corresponding to the concave region; and

forming a semiconductor stack on the substrate such that multiple cavities are formed between the semiconductor stack and the ion implantation region,

wherein the mask block comprises a material made of metal or oxide.

15. The method of manufacturing a light-emitting device according to claim 14 , wherein the multiple cavities are on the concave region.