Semiconductor system, device and structure

1. An Integrated Circuit device, comprising:

a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;

at least one metal layer providing interconnection between at least a portion of said plurality of first transistors;

a second layer of less than 2 micron thickness, said second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer; and

at least one conductive structure constructed to provide power to a portion of said second transistors,

wherein said provide power is controlled by at least one of said transistors, and

wherein said at least one conductive structure provides a heat removal path between at least one of said second transistors and a top or bottom surface of said device.

2. An Integrated Circuit device, comprising:

a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;

at least one metal layer providing interconnection between at least a portion of said plurality of first transistors;

a second layer of less than 2 micron thickness, said second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer; and

at least one conductive structure constructed to provide power to a portion of said second transistors,

wherein said provide power is controlled by at least one of said transistors; and

a via through said second layer,

wherein said via is part of a heat removal structure of said device.

3. An Integrated Circuit device, comprising:

a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;

at least one metal layer providing interconnection between at least a portion of said plurality of first transistors;

a second layer of less than 2 micron thickness, said second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer; and

at least one conductive structure constructed to provide power to a portion of said second transistors,

wherein said provide power is controlled by at least one of said transistors; and

a heat-spreader layer disposed between said first layer and said second layer.

4. An Integrated Circuit device, comprising:

a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;

at least one metal layer providing interconnection between at least a portion of said plurality of first transistors;

a second layer of less than 2 micron thickness, said second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer; and

at least one conductive structure constructed to provide power to a portion of said second transistors,

wherein said provide power is controlled by at least one of said transistors; and

at least one pad designed to connect said at least one conductive structure to external devices.

5. An Integrated Circuit device, comprising:

a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;

at least one metal layer providing interconnection between at least a portion of said plurality of first transistors;

a second layer of less than 2 micron thickness, said second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer; and

at least one conductive structure constructed to provide power to a portion of said second transistors,

wherein said provide power is controlled by at least one of said transistors, and

wherein said at least one conductive structure is designed by an engineering design automation tool in consideration of its heat removal capabilities.

6. An Integrated Circuit device, comprising:

a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;

at least one metal layer providing interconnection between at least a portion of said plurality of first transistors;

a second layer of less than 2 micron thickness, said second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer; and

at least one conductive structure constructed to provide power to a portion of said second transistors,

wherein said provide power is controlled by at least one of said transistors, and

wherein said at least one conductive structure comprises at least two layers, and

wherein said at least two layers comprise a global power grid and a local power grid.

7. An Integrated Circuit device, comprising:

a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;

at least one metal layer providing interconnection between said plurality of first transistors;

a first wire structure constructed to provide power to a portion of said first transistors;

a second layer of less than 2 micron thickness, said second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer; and

a second wire structure constructed to provide power to a portion of said second transistors,

wherein said second wire structure has a current carrying capacity substantially higher than said first wire structure.

8. The device according to claim 7 ,

wherein said second wire structure provides a heat removal path between at least one of said second transistors and a top or bottom surface of said device.

9. The device according to claim 7 , further comprising:

a via through said second layer,

wherein said via is part of a heat removal structure of said device.

10. The device according to claim 7 , further comprising:

a heat-spreader layer disposed between said first layer and said second layer.

11. The device according to claim 7 , further comprising:

at least one pad designed to connect said second wire structure to external devices.

12. The device according to claim 7 ,

wherein said second wire structure is designed by an engineering design automation tool in consideration of its heat removal capabilities.

13. The device according to claim 7 ,

wherein said second wire structure comprises at least two layers, and

wherein said at least two layers comprise a global power grid and a local power grid.

14. An Integrated Circuit device, comprising:

a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;

at least one metal layer providing interconnection between said plurality of first transistors;

a second layer of less than 2 micron thickness, said second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer; and

a conductive structure constructed to provide power to a portion of said second transistors,

wherein said conductive structure comprises at least two layers, and

wherein said two layers comprise a global power grid and a local power grid.

15. The device according to claim 14 ,

wherein said conductive structure provides a heat removal path between at least one of said second transistors and a top or bottom surface of said device.

16. The device according to claim 14 , further comprising:

a via through said second layer,

wherein said via is part of a heat removal structure of said device.

17. The device according to claim 14 , further comprising:

a heat-spreader layer disposed between said first layer and said second layer.

18. The device according to claim 14 , further comprising:

at least one pad designed to connect said conductive structure to external devices.

19. The device according to claim 14 ,

wherein said conductive structure is designed by an engineering design automation tool in consideration of its heat removal capabilities.