Avalanche-rugged silicon carbide (SiC) power Schottky rectifier

1. A silicon carbide (SiC) device, comprising:

a drift region of a first conductivity type;

a shielding body;

a Schottky region;

a rim having a second conductivity type at least partially surrounding the shielding body and the Schottky region; and

a termination region at least partially surrounding the rim,

the termination region having a transition zone disposed between a first zone and a second zone, the second zone having a top surface lower in depth than a depth of a top surface of the first zone, the transition zone having a recess, the first zone, the second zone, and the transition zone each having a doped region of the second conductivity type.

2. The SiC device of claim 1 , the shielding body has a shielding body doped region that has a doping concentration the same as the doping concentration of a rim doped region of the rim.

3. The SiC device of claim 1 , wherein the first zone has a depth equal to a depth of the doped region of the second zone.

4. The SiC device of claim 1 , wherein the doped region of the transition zone has a depth that is the same as a depth of the doped region of the first zone and as a depth of the doped region of the second zone.

5. The SiC device of claim 1 , wherein the transition zone has an edge defined by a step.

6. The SiC device of claim 1 , wherein the shielding body is defined by a trench and a shielding body doped region, the shielding body doped region has a thickness at least one third of a depth of the trench.

7. A silicon carbide (SiC) device, comprising:

a drift region of a first conductivity type;

an array of a plurality of shielding bodies interleaved with a plurality of Schottky regions;

a rim having a second conductivity type at least partially surrounding the array; and

a termination region at least partially surrounding the rim, the termination region having a first zone having a doped region with a first thickness, the termination region having a second zone having a doped region with a second thickness different from the first thickness, the first zone has a top surface higher than a top surface of the second zone.

8. The SiC device of claim 7 , the plurality of shielding bodies each has a shielding body doped region that has a doping concentration the same as the doping concentration of a rim doped region of the rim.

9. The SiC device of claim 7 , wherein the termination region is doped with the second conductivity type, the doped region of the second zone has a depth equal to a depth of the doped region of the first zone.

10. The SiC device of claim 7 , wherein the termination region has a transition zone disposed between the second zone and the first zone,

the first zone is disposed between the rim and the transition zone,

the first zone has a top surface that is substantially flat,

the second zone has a top surface that is substantially flat and lower in depth than a depth of the top surface of the first zone, and

the transition zone has a recess.

11. The SiC device of claim 7 , wherein the termination region has a transition zone disposed between the first zone and the second zone,

the doped region of the first zone on a first side of the transition zone has a relatively high charge, and the doped region of the second zone on a second side of the transition zone has a relatively low charge.

12. The SiC device of claim 7 , wherein at least one of the plurality of shielding bodies is defined by a trench and a shielding body doped region, the shielding body doped region has a thickness at least one third of a depth of the trench.

13. The SiC device of claim 7 , wherein at least one of the plurality of Schottky regions is defined by a metal disposed over a mesa between a pair of the plurality of shielding bodies, the metal is disposed over the pair of the plurality of shielding bodies.

14. A silicon carbide (SiC) device comprising:

a drift region of a first conductivity type;

an array of a plurality of shielding bodies interleaved with a plurality of Schottky regions;

a rim having a second conductivity type at least partially surrounding the array; and

a termination region at least partially surrounding the rim, the termination region having a first zone having a doped region with a first thickness, the termination region having a second zone having a doped region with a second thickness different from the first thickness,

the termination region having a transition zone disposed between the first zone and the second zone, the transition zone having a doped region that has a first portion and a second portion, the first portion having a thickness that is different than a thickness of the second portion.

15. The SiC device of claim 14 , wherein

the first zone has a top surface that is substantially flat,

the second zone has a top surface that is substantially flat and lower in depth than a depth of the top surface of the first zone.

16. The SiC device of claim 14 , wherein the transition zone has a doped region having a depth that is the same as a depth of the doped region of the first zone and as a depth of the doped region of the second zone.

17. A method of producing a silicon carbide (SiC) device, comprising:

forming a drift region of a first conductivity type;

forming a shielding body;

forming a Schottky region;

forming a rim having a second conductivity type at least partially surrounding the shielding body and the Schottky region; and

forming a termination region at least partially surrounding the rim,

the termination region having a transition zone disposed between a first zone and a second zone, the second zone having a top surface lower in depth than a depth of a top surface of the first zone, the transition zone having a recess, the first zone, the second zone, and the transition zone each having a doped region of the second conductivity type.

18. The SiC device of claim 17 , wherein the shielding body has a shielding body doped region that has a doping concentration the same as the doping concentration of a rim doped region of the rim.

19. The SiC device of claim 17 , wherein the doped region of the first zone has a depth equal to depth of the doped region of the second zone.