Polycrystalline diamond, polycrystalline diamond compacts, methods of making same, and applications
Embodiments of the invention relate to polycrystalline diamond compacts (“PDC”) exhibiting enhanced diamond-to-diamond bonding. In an embodiment, a PDC includes a polycrystalline diamond (“PCD”) table bonded to a substrate. At least a portion of the PCD table includes a plurality of diamond grains defining a plurality of interstitial regions. The plurality of interstitial regions includes a metal-solvent catalyst. The plurality of diamond grains exhibit an average grain size of about 30 μm or less. The plurality of diamond grains and the metal-solvent catalyst collectively exhibit an average electrical conductivity of less than about 1200 S/m. Other embodiments are directed to PCD, employing such PCD, methods of forming PCD and PDCs, and various applications for such PCD and PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.
1. A polycrystalline diamond compact, comprising:
a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including:
a plurality of diamond grains directly bonded together via diamond-to-diamond bonding to define interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 50 μm or less;
a catalyst occupying at least a portion of the interstitial regions;
wherein the unleached portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe or more;
wherein the unleached portion of the polycrystalline diamond table exhibits an average electrical conductivity of less than about 1200 S/m; and
wherein the unleached portion of the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 ; and
a substrate bonded to the polycrystalline diamond table.
2. The polycrystalline diamond compact of claim 1 wherein the coercivity is about 115 Oe to about 250 Oe.
3. The polycrystalline diamond compact of claim 2 wherein the coercivity is about 130 Oe to about 160 Oe.
4. The polycrystalline diamond compact of claim 1 wherein the unleached portion of the polycrystalline diamond table exhibits a specific magnetic saturation of about 15 G·cm 3 /g or less.
5. The polycrystalline diamond compact of claim 4 wherein:
the coercivity is about 115 Oe to about 175 Oe;
the specific magnetic saturation is about 10 G·cm 3 /g to about 15 G·cm 3 /g; and
the unleached portion of the polycrystalline diamond table includes metal-solvent catalyst in an amount of about 3 weight % to about 7.5 weight %.
6. The polycrystalline diamond compact of claim 1 wherein the average electrical conductivity is about 25 S/m to about 1000 S/m.
7. The polycrystalline diamond compact of claim 6 wherein the average electrical conductivity is about 100 S/m to about 500 S/m.
8. The polycrystalline diamond compact of claim 1 wherein the coercivity is about 115 Oe to about 175 Oe.
9. The polycrystalline diamond compact of claim 8 wherein the average electrical conductivity is less than 750 S/m.
10. The polycrystalline diamond compact of claim 8 wherein the unleached portion of the polycrystalline diamond table exhibits a specific magnetic saturation of about 5 G·cm 3 /g to about 15 G·cm 3 /g.
11. The polycrystalline diamond compact of claim 5 wherein the G ratio is about 5.0×10 6 to about 15×10 6 .
12. The polycrystalline diamond compact of claim 5 wherein the unleached portion of the polycrystalline diamond table exhibits a specific permeability less than about 0.10 G·cm 3 /(g·Oe).
13. The polycrystalline diamond compact of claim 1 wherein the catalyst is present in the unleached portion of the polycrystalline diamond table in an amount greater than 0 weight % to about 7.5 weight %.
14. The polycrystalline diamond compact of claim 1 wherein the average grain size is about 30 μm or less.
15. The polycrystalline diamond compact of claim 1 wherein:
the polycrystalline diamond table includes an upper working surface and an interfacial surface bonded to the substrate; and
the average electrical conductivity of the polycrystalline diamond table decreases with distance from the upper working surface toward the substrate.
16. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table is formed from only single layer of polycrystalline diamond extending from an upper working surface of the polycrystalline diamond table to the substrate.
17. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table includes:
a first layer including coarse-sized diamond grains exhibiting a first average grain size; and
a second layer including fine-sized diamond grains exhibiting a second average grain size less than the first average grain size, the first layer disposed between the second layer and the substrate.
18. A polycrystalline diamond compact, comprising:
a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including:
a plurality of diamond grains directly bonded together via diamond-to-diamond bonding to define interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 30 μm or less;
a catalyst occupying at least a portion of the interstitial regions;
wherein the unleached portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe to about 175 Oe;
wherein the unleached portion of the polycrystalline diamond table exhibits an average electrical conductivity of less than about 1200 S/m; and
wherein the unleached portion of the polycrystalline diamond table exhibits a thermal stability, as determined by distance cut, prior to failure in a vertical lathe test, of at least about 1300 m.
19. A polycrystalline diamond compact, comprising:
a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including:
a plurality of diamond grains directly bonded together via diamond-to-diamond bonding to define interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 50 μm or less;
a catalyst occupying at least a portion of the interstitial regions, the catalyst is present in the unleached portion of the polycrystalline diamond table in an amount greater than about 0 weight % to about 7.5 weight %;
wherein the unleached portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe or more;
wherein the unleached portion of the polycrystalline diamond table exhibits an average electrical conductivity of less than about 1200 S/m; and
wherein the unleached portion of the polycrystalline diamond table exhibits a thermal stability, as determined by distance cut, prior to failure, in a vertical lathe test, of about 1300 m; and
a substrate bonded to the polycrystalline diamond table.
20. The polycrystalline diamond compact of claim 18 wherein the polycrystalline diamond table includes a leached region, and wherein the unleached portion of the polycrystalline diamond table is disposed between the substrate and the leached region.
21. The polycrystalline diamond compact of claim 20 wherein the coercivity of the unleached portion of the polycrystalline diamond table is about 130 Oe to about 160 Oe.
22. The polycrystalline diamond compact of claim 18 wherein the coercivity of the unleached portion of the polycrystalline diamond table is about 155 Oe to about 175 Oe.
23. The polycrystalline diamond compact of claim 22 wherein the plurality of diamond grains and the metal-solvent catalyst of the unleached portion of the polycrystalline diamond table collectively exhibit a specific permeability of about 0.060 to about 0.090 G·cm 3 /g·Oe.
24. The polycrystalline diamond compact of claim 23 wherein the polycrystalline diamond table exhibits a G ratio of at least about 30.0×10 6 .
25. The polycrystalline diamond compact of claim 23 wherein the unleached portion of the polycrystalline diamond table exhibits a G ratio of at least about 5.0×10 6 to about 15.0×10 6 .
26. The polycrystalline diamond compact of claim 19 wherein the polycrystalline diamond table includes a leached region, and wherein the portion of the polycrystalline diamond table is disposed between the substrate and the leached region.
27. The polycrystalline diamond compact of claim 26 wherein the coercivity of the unleached portion of the polycrystalline diamond table is about 130 Oe to about 160 Oe.
28. The polycrystalline diamond compact of claim 19 wherein the coercivity of the unleached portion of the polycrystalline diamond table is about 155 Oe to about 175 Oe.
29. The polycrystalline diamond compact of claim 28 wherein the plurality of diamond grains and the metal-solvent catalyst of the unleached portion of the polycrystalline diamond table collectively exhibit a specific permeability of about 0.060 to about 0.090 G·cm 3 /g·Oe.
30. The polycrystalline diamond compact of claim 29 wherein the polycrystalline diamond table exhibits a G ratio of at least about 30.0×10 6 .
31. A rotary drill bit, comprising:
a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and
a plurality of cutting elements mounted to the bit body, at least one of the plurality of cutting elements configured as the polycrystalline diamond compact according to claim 1 .
32. A rotary drill bit, comprising:
a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and
a plurality of cutting elements mounted to the bit body, at least one of the plurality of cutting elements configured as the polycrystalline diamond compact according to claim 18 .
33. A rotary drill bit, comprising:
a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and
a plurality of cutting elements mounted to the bit body, at least one of the plurality of cutting elements configured as the polycrystalline diamond compact according to claim 19 .