Method for making semiconductor device with stacked analog components in back end of line (BEOL) regions
A method for making a semiconductor device may include forming a first dielectric layer above a semiconductor substrate, forming a first trench in the first dielectric layer, filling the first trench with electrically conductive material, removing upper portions of the electrically conductive material to define a lower conductive member with a recess thereabove, forming a filler dielectric material in the recess to define a second trench. The method may further include filling the second trench with electrically conductive material to define an upper conductive member, forming a second dielectric layer over the first dielectric layer and upper conductive member, forming a first via through the second dielectric layer and underlying filler dielectric material to the lower conductive member, and forming a second via through the second dielectric layer to the upper conductive member.
1. A device, comprising:
a substrate;
a plurality of active circuit regions in the substrate;
a first dielectric layer on the substrate and on the plurality of active circuit regions;
a first opening in the first dielectric layer;
a first conductive layer in the first opening;
a second dielectric layer on the first dielectric layer and on the first conducive layer in the first opening;
a second opening in the second dielectric layer;
a second conductive layer in the second opening; and
a third dielectric layer on the second dielectric layer and on the second conductive layer, the first conductive layer being separated from the third dielectric layer by the second dielectric layer.
2. The device of claim 1 , further comprising a first liner between the first dielectric layer and the first conductive layer.
3. The device of claim 2 , further comprising a second liner between the second dielectric layer and the second conductive layer.
4. The device of claim 1 wherein the first conductive layer has a first shape and the second conductive layer has a second shape, the first shape being larger than the second shape and the first shape being different from the second shape.
5. The device of claim 4 , further comprising a first via, the first shape including a protrusion, the first via being coupled to the protrusion, the first via extending through the second dielectric layer.
6. The device of claim 5 wherein the second shape is rectangular.
7. The device of claim 5 , further comprising a second via that is coupled to the second conductive layer.
8. A device, comprising:
a substrate;
a first dielectric layer on the substrate;
a trench in the first dielectric layer;
a first conductive layer in the trench;
a second dielectric layer on the first conductive layer in the trench;
a first opening in the second dielectric layer, the first opening being in the trench;
a second conductive layer in the first opening; and
a first via extending into the trench, past the second conductive layer, the first via electrically coupled to the first conductive layer.
9. The device of claim 8 , further comprising:
a second opening in the trench; and
a third conductive layer in the second opening.
10. The device of claim 9 , further comprising a second via coupled to the second conductive layer and a third via coupled to the third conductive layer.
11. The device of claim 8 , further comprising a second via coupled to the second conductive layer.
12. The device of claim 11 , further comprising a third via coupled to the first conductive layer and a fourth via coupled to the second conductive via.
13. The device of claim 8 wherein the first dielectric layer has a first surface, the trench extending into the first dielectric layer from the first surface, the first conductive layer having a first surface that is spaced from the first surface of the first dielectric layer and a second surface that faces a bottom surface of the trench.
14. A method, comprising:
forming a first dielectric layer on a substrate, the substrate including active circuit elements;
forming a trench in the first dielectric layer;
forming a first conductive layer in the trench;
forming a second dielectric layer in the trench on the first conductive layer;
forming a first opening in the second dielectric layer in the trench;
forming a second conductive layer in the first opening; and
forming a third dielectric layer on the second conductive layer, the first conducive layer being separated from the third dielectric layer by the second dielectric layer and the second conductive layer.
15. The method of claim 14 , further comprising:
forming a first via through the second conductive layer; and
coupling the first via to the first conductive layer.
16. The method of claim 15 , further comprising:
forming a second via through the third conductive layer; and
coupling the second via to the second conductive layer.