Voltage breakdown device for solar cells

1. A solar cell, comprising:

a semiconductor substrate;

a plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate;

a plurality of conductive contacts coupled to the plurality of alternating N-type and P-type semiconductor regions; and

a voltage breakdown device disposed above the substrate, the voltage breakdown device comprising one of the plurality of conductive contacts in electrical contact with one of the N-type semiconductor regions and with one of the P-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate to form a P/N junction of the voltage breakdown device, wherein the semiconductor substrate is an N-type semiconductor substrate, the one of the plurality of conductive contacts is in direct contact with the one of the N-type semiconductor regions and is not in direct contact with the one of the P-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions.

2. The solar cell of claim 1 , wherein another of the plurality of conductive contacts is in direct contact with the one of the P-type semiconductor regions at a location different from a location where the one of the plurality of conductive contacts is in indirect contact with the one of the P-type semiconductor regions.

3. The solar cell of claim 1 , wherein an N-type semiconductor layer is disposed between the one of the plurality of conductive contacts and the one of the P-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions.

4. The solar cell of claim 3 , wherein the N-type semiconductor layer is an N-type doped amorphous silicon layer.

5. The solar cell of claim 3 , wherein a tunneling dielectric layer is disposed between the N-type semiconductor layer and the one of the P-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions.

6. A solar cell, comprising:

a semiconductor substrate;

a plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate;

a plurality of conductive contacts coupled to the plurality of alternating N-type and P-type semiconductor regions; and

a voltage breakdown device disposed above the substrate, the voltage breakdown device comprising one of the plurality of conductive contacts in electrical contact with one of the N-type semiconductor regions and with one of the P-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate to form a P/N junction of the voltage breakdown device, wherein the semiconductor substrate is a P-type semiconductor substrate, the one of the plurality of conductive contacts is in direct contact with the one of the P-type semiconductor regions and is not in direct contact with the one of the N-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions.

7. The solar cell of claim 6 , wherein another of the plurality of conductive contacts is in direct contact with the one of the N-type semiconductor regions at a location different from a location where the one of the plurality of conductive contacts is in indirect contact with the one of the N-type semiconductor regions.

8. The solar cell of claim 6 , wherein a P-type semiconductor layer is disposed between the one of the plurality of conductive contacts and the one of the N-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions.

9. The solar cell of claim 8 , wherein the P-type semiconductor layer is a P-type doped amorphous silicon layer.

10. The solar cell of claim 8 , wherein a tunneling dielectric layer is disposed between the P-type semiconductor layer and the one of the N-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions.