Granted Patent B1

US 9,605,199 · App. 15/086,699 · Granted Mar 28, 2017

Abstract

Claims (62)

1. A device comprising a semiconductor light source and a Eu 2+ activated phosphor radiationally coupled to the light source;

wherein the phosphor is selected from

A. M 3 SiO 3 X 4 :Eu 2+ ;

B. M 5 Si 3 O 9 X 4 :Eu 2+ ;

C. M 1.64 Si 0.82 O 3.1 X 0.36 :Eu 2+ ;

D. M 10 Si 3 O 9 X 14 :Eu 2+ ;

E. M 2 SiO 3 X 2 :Eu 2+ ; and

wherein

M is Ba, Ca, Sr, or a mixture thereof;

X is Br, or a mixture of Br and Cl.

2. A device according to claim 1 , wherein the phosphor is M 3 SiO 3 X 4 :Eu 2+ .

3. A device according to claim 1 , wherein the phosphor is M 5 Si 3 O 9 X 4 :Eu 2+ .

4. A device according to claim 1 , wherein the phosphor is M 1.64 Si 0.82 O 3.1 X 0.36 :Eu 2+ .

5. A device according to claim 1 , wherein the phosphor is M 10 Si 3 O 9 X 14 :Eu 2+ .

6. A device according to claim 1 , wherein the phosphor is M 2 SiO 3 X 2 :Eu 2+ .

7. A device according to claim 1 , wherein the phosphor is selected from

Ba 3 SiO 3 Br 4 :Eu 2+ ;

Ba 5 Si 3 O 9 Br 4 :Eu 2+ ;

Ca 5 Si 3 O 9 Br 4 :Eu 2+ ;

Ba 0.984 Sr 0.656 Si 0.82 O 3.1 Br 0.36 : EU 2+ ;

Sr 10 Si 3 O 9 Br 14 :Eu 2+ ; and

Sr 2 SiO 3 Br 2 :Eu 2+ .

8. A device according to claim 1 , additionally comprising a Mn 4+ -doped phosphor of formula I

A x [M 1 F y ]:Mn 4+    I

wherein

A is Li, Na, K, Rb, Cs, or a combination thereof;

M 1 is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof;

x is the absolute value of the charge of the [M 2 F y ] ion; and

y is 5, 6 or 7.

9. A device according to claim 8 , wherein the Mn 4+ -doped phosphor of formula I is K 2 SiF 6 : Mn 4+ .

10. A backlight unit comprising a device according to claim 1 .

11. An electronic device comprising a backlight unit according to claim 1 .

12. A lighting apparatus comprising a device according to claim 1 .

13. A Eu 2+ activated phosphor selected from the group consisting of

A. M 3 SiO 3 X 4 :Eu 2+ ;

B. M 5 Si 3 O 9 X 4 :Eu 2+ ;

C. M 1.64 Si 0.82 O 3.1 X 0.36 :Eu 2+ ;

D. M 10 Si 3 O 9 X 14 :Eu 2+ ;

E. M 2 SiO 3 X 2 :Eu 2+ ; and

wherein

M is Ba, Ca, Sr, or a mixture thereof;

X is Br, or a mixture of Br and Cl.

14. A Eu 2+ activated phosphor according to claim 13 , of formula M 3 SiO 3 X 4 :Eu 2+ .

15. A Eu 2+ activated phosphor according to claim 13 , of formula M 5 Si 3 O 9 X 4 :Eu 2+ .

16. A Eu 2+ activated phosphor according to claim 13 , of formula M 1.64 Si 0.82 O 3.1 X 0.36 :Eu 2+ .

17. A Eu 2+ activated phosphor according to claim 13 , of formula M 10 Si 3 O 9 X 14 :Eu 2+ .

18. A Eu 2+ activated phosphor according to claim 13 , of formula M 2 SiO 3 X 2 :Eu 2+ .

19. A Eu 2+ activated phosphor according to claim 13 , selected from

Ba 3 SiO 3 Br 4 :Eu 2+ ;

Ba 5 Si 3 O 9 Br 4 :Eu 2+ ;

Ca 5 Si 3 O 9 Br 4 :Eu 2+ .

Ba 0.984 Sr 0.656 Si 0.82 O 3.1 Br 0.36 : EU 2+ ;

Sr 10 Si 3 O 9 Br 14 :Eu 2+ ; and

Sr 2 SiO 3 Br 2 :Eu 2+ .

20. A Eu 2+ activated phosphor produced by combining

from about 3.2 parts to about 3.4 parts Ba CO 3 ,

from about 1.5 to about 1.7 parts SrCO 3 ,

from about 0.87 to about 0.89 parts SiO 2 , from about 0.02 to about 0.15 parts Eu 2 O 3 and

from about 0.54 to about 0.62 parts NH 4 Br; and

in a first firing step, firing the combination at a temperature ranging from about 800° C. to about 1300° C. under a reducing atmosphere to form an intermediate product; and

in a second firing step, firing the intermediate product at a temperature ranging from about 800° C. to about 1300° C. under the reducing atmosphere.

21. A Eu 2+ activated phosphor according to claim 20 , wherein in the first firing step, the combination is fired at about 1100° C.; and in the second firing step, the intermediate product is fired at about 1100° C.

Assignments (10)