Solid-state imaging device and imaging apparatus
The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity.
1. A solid-state imaging device comprising:
a semiconductor layer including;
first and second photoelectric conversion units that are stacked in the semiconductor layer; and
a longitudinal transistor having a gate electrode that is embedded in the semiconductor layer from a first surface of the semiconductor layer,
an organic photoelectric conversion unit that is arranged over a second surface of the semiconductor layer, wherein the second surface is a light incident surface of the semiconductor layer,
wherein the first photoelectric conversion unit is formed over a portion of the gate electrode of the longitudinal transistor and is electrically connected to the longitudinal transistor.
2. The solid-state imaging device according to claim 1 , further comprising:
a charge read circuit, wherein the charge read circuit is disposed at a side of the first surface of the semiconductor layer,
wherein a charge is generated in the first photoelectric conversion unit, and the charge is transferred to the charge read circuit via the gate electrode.
3. The solid-state imaging device according to claim 2 , wherein the charge is transferred to the charge read circuit via the gate electrode during a charge read period.
4. The solid-state imaging device according to claim 1 , wherein the first photoelectric conversion unit is adjacent to the second surface of the semiconductor layer.
5. The solid-state imaging device according to claim 4 , wherein the second photoelectric conversion unit is between the first photoelectric conversion unit and the first surface of the semiconductor layer.
6. The solid-state imaging device according to claim 5 , wherein the gate electrode of the longitudinal transistor extends from the first surface of the semiconductor layer to the first photoelectric conversion unit.
7. The solid-state imaging device according to claim 6 , further comprising:
a charge accumulation region, wherein the gate electrode of the longitudinal transistor is between the second photoelectric conversion unit and the charge accumulation region.
8. The solid-state imaging device according to claim 7 , wherein the organic photoelectric conversion unit includes a first electrode, an organic photoelectric conversion layer, and a second electrode.
9. The solid-state imaging device according to claim 8 , wherein the charge accumulation region is electrically connected to the second electrode of the organic photoelectric conversion unit.
10. The solid-state imaging device according to claim 9 , wherein the charge accumulation region is connected to a wiring layer at a contact region, and wherein the wiring layer is connected to the second electrode of the organic photoelectric conversion unit.
11. The solid-state imaging device according to claim 10 , wherein wiring layer connected to the second electrode of the organic photoelectric conversion unit has a cross-section of a cross shape.
12. The solid-state imaging device according to claim 11 , further comprising:
a light shielding film, wherein the light shielding film is at least partially disposed between the organic photoelectric conversion unit and the second surface of the semiconductor layer, wherein the light shielding film and the wiring layer are configured to block light.
13. The solid-state imaging device according to claim 12 , wherein an aperture is formed between the light shielding film and the wiring layer.
14. The solid-state imaging device according to claim 1 , wherein the organic photoelectric conversion unit has an area larger than the area of the first photoelectric conversion unit.
15. The solid-state imaging device according to claim 1 , wherein the organic photoelectric conversion unit is sensitive to green light.
16. The solid-state imaging device according to claim 15 , wherein the organic photoelectric conversion unit transmits blue and red light.
17. The solid-state imaging device according to claim 16 , wherein the first photoelectric conversion unit is sensitive to blue light.
18. The solid-state imaging device according to claim 17 , wherein the second photoelectric conversion unit is sensitive to red light.
19. The solid-state imaging device according to claim 1 , wherein the first photoelectric conversion unit is between the gate electrode of the longitudinal transistor and the second surface of the semiconductor layer.
20. The solid-state imaging device according to claim 1 , further comprising:
a floating diffusion, wherein the floating diffusion is formed in the semiconductor layer adjacent a side of the second photoelectric conversion unit opposite the longitudinal transistor.
21. The solid-state imaging device according to claim 1 , wherein the first surface of the semiconductor layer is a circuit formation surface.
22. The solid-state imaging device according to claim 1 , wherein an area of the first photoelectric conversion unit is greater than an area of the second photoelectric conversion unit.
23. The solid-state imaging device according to claim 22 , wherein an area of the organic photoelectric conversion unit is greater than the area of the first photoelectric conversion unit.
24. The solid-state imaging device according to claim 1 , wherein the semiconductor layer is silicon.
25. The solid-state imaging device according to claim 1 , wherein the imaging device is a back surface radiation type structure.
26. An electronic apparatus, comprising:
a solid-state imaging device;
an optical system that forms image light on the solid-state imaging device; and
a signal processing circuit that processes an output signal of the solid-state imaging device, the solid-state imaging device including:
a semiconductor layer including;
first and second photoelectric conversion units that are stacked in the semiconductor layer; and
a longitudinal transistor having a gate electrode that is embedded in the semiconductor layer from a first surface of the semiconductor layer,
an organic photoelectric conversion unit that is arranged over a second surface of the semiconductor layer, wherein the second surface is a light incident surface of the semiconductor layer,
wherein the first photoelectric conversion unit is formed over a portion of the gate electrode of the longitudinal transistor and is electrically connected to the longitudinal transistor.