Electronic device including a HEMT with a segmented gate electrode
An electronic device can include a low-side HEMT including a segmented gate electrode; and a high-side HEMT coupled to the low-side HEMT, wherein the low-side and high voltage HEMTs are integrated within a same semiconductor die. In another aspect, an electronic device can include a source electrode; a low-side HEMT; a high-side HEMT coupled to the low-side HEMT; and a resistive element. In an embodiment, the resistive element can be coupled to the source electrode and a gate electrode of the high voltage HEMT, and in another embodiment, the resistive element can be coupled to the source electrode and a drain of the low-side HEMT. A process of forming an electronic device can include forming a channel layer over a substrate; and forming a gate electrode over the channel layer. The gate electrode can be a segmented gate electrode of a HEMT.
1. An electronic device comprising:
a low-side HEMT including a channel layer and a segmented gate electrode including gate members spaced apart from one another by spacings that do not include any part of the segmented gate electrode; and
a high-side HEMT coupled to the low-side HEMT; and
a resistive element that includes portions of the channel layer underlying the spacings between the gate members of the segmented gate electrode,
wherein the low-side and high-side HEMTs are integrated within a same die.
2. The electronic device of claim 1 , wherein the low-side and high-side HEMTs are part of a cascode circuit.
3. The electronic device of claim 2 , wherein the segmented gate electrode of the low-side HEMT is a switch gate of the cascode circuit, and a gate electrode of the high-side HEMT is a control gate of the cascode circuit.
4. The electronic device of claim 1 , wherein the low-side HEMT or the high-side HEMT is a depletion-mode HEMT.
5. The electronic device of claim 1 , wherein the low-side and the high-side HEMTs are depletion-mode HEMTs.
6. The electronic device of claim 1 , wherein each of the spacings are at least 11 nm.
7. The electronic device of claim 1 , further comprising a source electrode and a drain electrode, wherein the source electrode is coupled to the low-side HEMT, and the drain is coupled to the high-side HEMT.
8. The electronic device of claim 1 , further comprising a patterned interlevel dielectric layer and an interconnect that connects the gate members of the segmented gate electrode to one another.
9. An electronic device comprising:
a low-side HEMT including a source electrode, a channel layer, and a segmented gate electrode including gate members spaced apart from one other by spacings;
a high-side HEMT coupled to the low-side HEMT and including a gate electrode; and
a resistive element having a first terminal coupled to the source electrode of the low-side HEMT, wherein the resistive element includes portions of the channel layer underlying the spacings.
10. The electronic device of claim 9 , wherein the low-side HEMT comprises a drain electrode, and wherein the resistive element further comprises a second terminal coupled to the drain electrode of the low-side HEMT.
11. The electronic device of claim 9 , wherein the high-side HEMT further comprises a drain electrode coupled to the source electrode of the low-side HEMT.
12. The electronic device of claim 9 , wherein the gate members include discontinuous portions of a conductive layer.
13. The electronic device of claim 9 , wherein the spacings do not include portions of the segmented gate electrode.
14. The electronic device of claim 13 , wherein the segmented gate electrode does not overlie the channel layer within the spacings between the gate members.
15. The electronic device of claim 9 , wherein the low-side and high-side HEMTs and the resistive element are parts of a same die.
16. The electronic device of claim 9 , wherein each of the spacings is at least 11 nm.