Clip and related methods
View Patent ↗A clip for a semiconductor package. Implementations may include: an electrically conductive clip having a first end and a second end and a middle section between the first end and the second end. The first end may be configured to couple to a first die through a bonding material. The second end may be configured to couple to a second die through a bonding material. The middle section may be configured to couple to an emitter structure through a bonding material. The clip may include an integrally formed electrically conductive material and include an M-shape. A middle of the M-shape may be coupled to the emitter structure.
1. A clip for a semiconductor package comprising:
an electronically conductive clip having a first end and a second end and a middle section between the first end and the second end;
wherein the first end is configured to couple to a first die through a bonding material;
wherein the second end is configured to couple to a second die through a bonding material;
wherein the middle section is configured to couple to an emitter structure through a bonding material, the emitter structure physically separate from the first die and from the second die;
wherein the clip comprises an integrally formed electrically conductive material and comprises an M-shape;
wherein the second end is adjacent to the middle section and is opposite the first end;
wherein a middle of the M-shape is coupled to the emitter structure.
2. The clip of claim 1 , wherein the integrally formed electrically conductive material is selected from the group consisting of copper, copper alloy, aluminum, aluminum alloy, steel, brass, nickel, tin and any combination thereof.
3. The clip of claim 1 , wherein the bonding material is selected from the group consisting of a solder paste, a solder wire, a preform solder, a sintered Ag metal, a sintered Ag laminate, and any combination thereof.
4. The clip of claim 1 , wherein the first die is one of an insulated gate bipolar transistor (IGBT) and a rectifier.
5. The clip of claim 1 , wherein the second die is one of an IGBT and a rectifier.
6. The clip of claim 1 , wherein the second end of the clip extends past the second die and is configured to couple is coupled to a terminal.
7. The clip of claim 1 , wherein the emitter is comprised of silicon.
8. A semiconductor package comprising:
a first collector coupled to a first die through a bonding material;
a second collector coupled to a second die through a bonding material;
an emitter located between the first collector and the second collector; and
an M-shaped clip coupled to the first collector, the second collector, and the emitter through a bonding material;
wherein a middle of the M-shape is coupled to the emitter; and
wherein the middle of the M-shape forms a convex shape relative to a plane substantially parallel with the first die, the second die, and the emitter.
9. The package of claim 8 , wherein the first die is an insulated gate bipolar transistor (IGBT).
10. The package of claim 8 , wherein the second die is a rectifier.
11. The package of claim 8 , wherein the bonding material is selected from the group consisting of a solder paste, a solder wire, a preform solder, a sintered Ag metal, a sintered Ag laminate, and any combination thereof.
12. The package of claim 8 , wherein the M-shaped clip comprises at least one of copper, copper alloy, aluminum, aluminum alloy, steel, brass, nickel, tin, and any combination thereof.
13. The package of claim 8 , wherein the middle of the M-shape is located below a top surface of the first die and a top surface of the second die.