MULTI-WAVELENGTH LASER APPARATUS
A system and method for providing laser diodes emitting multiple wavelengths is described. Multiple wavelengths and/or colors of laser output are obtained by having multiple laser devices, each emitting a different wavelength, packaged onto the same substrate. In other embodiments, multiple laser devices having different wavelengths are formed from the same substrate.
1 . A method of forming an optical device, the method comprising:
providing a gallium and nitrogen containing crystalline surface region having a semipolar orientation;
forming an active region overlaying the gallium and nitrogen containing crystalline surface region, the active region comprising at least two quantum well regions and including a barrier layer and a plurality of light emission layers, the plurality of light emission layers including at least a first light emission layer and a second light emission layer formed using one or more selective area epitaxy (SAE) processes to provide the first light emission layer with a different composition than the second light emission layer, the plurality of light emission layers being characterized by an emission wavelength deviation of at least 20 nm;
forming a first stripe member overlaying the first light emission layer and oriented substantially in a projection of a c-direction with respect to the semipolar orientation, the first light emission layer having a substantially uniform composition in lateral directions to provide a first laser beam having a first wavelength of between 425 nm to 470 nm, the first light emission layer being adapted to emit the first laser beam associated with a blue color at the first wavelength;
forming a second stripe member overlaying the second light emission layer and oriented substantially in the projection of the c-direction with respect to the semipolar orientation, the second light emission layer having a substantially uniform composition in lateral directions to provide a second laser beam having a second wavelength of between 490 nm to 560 nm, the second light emission layer being adapted to emit the second laser beam associated with a green color at the second wavelength; and
forming an output region;
wherein:
the first stripe member comprises a first end and a second end;
the second stripe member comprises a first end and a second end;
the first end of the first stripe member and the first end of the second stripe member have mirror surfaces and share a first common face; and
the second end of the first stripe member and the second end of the second stripe member share a second common face.
2 . A method of forming an optical device, the method comprising:
providing a gallium and nitrogen containing crystalline surface region having a semipolar orientation;
forming an active region overlaying the gallium and nitrogen containing crystalline surface region, the active region comprising a plurality of light emission layers and a barrier layer, wherein the plurality of light emission layers are formed by processes that include:
defining a first growth area using a first dielectric pattern and forming a first light emission layer in the first growth area using a first selective area epitaxy (SAE) process; and
defining a second growth area using a second dielectric pattern and forming a second light emission layer in the second growth area using a second SAE process, wherein the first SAE process is different from the second SAE process;
forming a first stripe member overlaying the first light emission layer, the first stripe member oriented substantially in a projection of a c-direction with respect to the semipolar orientation, a composition of the first light emission layer adapted for emission of a first laser beam having a wavelength of between 425 nm to 470 nm; and
forming a second stripe member overlaying the second light emission layer, the second stripe member oriented substantially in the projection of the c-direction with respect to the semipolar orientation, a composition of the second light emission layer adapted for emission of a second laser beam having a wavelength of between 490 nm to 560 nm, wherein a first end of the first stripe member and a first end of the second stripe member have mirror surfaces and share a first common face, and a second end of the first stripe member and a second end of the second stripe member share a second common face.
3 . The method of claim 2 wherein differences between the first SAE process and the second SAE process result of a difference in concentration in at least one of indium, gallium, or nitrogen between the first light emission layer and the second light emission layer.
4 . The method of claim 2 wherein the first stripe member has a length of at least 100 μm and a width of at least 0.5 μm.
5 . The method of claim 2 wherein the semipolar orientation of the gallium and nitrogen containing crystalline surface region is one of {11-22}, { 10-1-1}, {20-21}, {30-31},{20-2-1}, or {30-3-1}.
6 . The method of claim 2 wherein a spatial dimension of the first light emission layer is different from a spatial dimension of the second light emission layer.
7 . The method of claim 2 wherein the active region further comprises an n-type cladding region overlaying the gallium and nitrogen containing crystalline surface region.
8 . The method of claim 2 further comprising forming a plurality of metal electrodes for selectively exciting the first light emission layer and the second light emission layer.
9 . A method of forming an optical device, the method comprising:
providing a gallium and nitrogen containing crystalline surface region having a semipolar orientation;
forming a first active region overlaying the gallium and nitrogen containing crystalline surface region, the first active region comprising a first barrier layer and a first light emission layer;
removing the first active region over a portion of the gallium and nitrogen containing crystalline surface region;
forming a second active region overlaying the portion of the gallium and nitrogen containing crystalline surface region, the second active region comprising a second barrier layer and a second light emission layer, wherein the first light emission layer is characterized by a different wavelength than the second light emission layer;
forming a first stripe member overlaying the first light emission layer, the first stripe member oriented substantially in a projection of a c-direction with respect to the semipolar orientation, a composition of the first light emission layer adapted for emission of a first laser beam having a wavelength of between 425 nm to 470 nm; and
forming a second stripe member overlaying the second light emission layer, the second stripe member oriented substantially in the projection of the c-direction with respect to the semipolar orientation, a composition of the second light emission layer adapted for emission of a second laser beam having a wavelength of between 490 nm to 560 nm, wherein a first end of the first stripe member and a first end of the second stripe member have mirror surfaces and share a first common face, and a second end of the first stripe member and a second end of the second stripe member share a second common face.
10 . The method of claim 9 wherein the first stripe member has a length of at least 100 μm and a width of at least 0.5 μm.
11 . The method of claim 9 wherein the semipolar orientation of the gallium and nitrogen containing crystalline surface region is one of {11-22}, { 10-1-1}, {20-21}, {30-31},{20-2-1}, or {30-3-1}.
12 . The method of claim 9 wherein the active region further comprises an n-type cladding region overlaying the gallium and nitrogen containing crystalline surface region.
13 . The method of claim 9 further comprising forming a plurality of metal electrodes for selectively exciting the first light emission layer and the second light emission layer.
14 . A method of forming an optical device, the method comprising:
providing a gallium and nitrogen containing crystalline surface region having a semipolar orientation;
forming an active region overlaying the gallium and nitrogen containing crystalline surface region, the active region comprising a light emission layer and a barrier layer;
diffusing a first amount of material from the barrier layer into a first portion of the light emission layer using a quantum well intermixing (QWI) process to provide a first light emission layer;
diffusing a second amount of material from the barrier layer into a second portion of the light emission layer using the QWI process to provide a second light emission layer, wherein the first amount of material diffused into the first light emission layer is different from the second amount of material diffused into the second light emission layer;
forming a first stripe member overlaying the first light emission layer, the first stripe member oriented substantially in a projection of a c-direction with respect to the semipolar orientation, a composition of the first light emission layer adapted for emission of a first laser beam having a wavelength of between 425 nm to 470 nm;
forming a second stripe member overlaying the second light emission layer, the second stripe member oriented substantially in the projection of the c-direction with respect to the semipolar orientation, a composition of the second light emission layer adapted for emission of a second laser beam having a wavelength of between 490 nm to 560 nm, wherein a first end of the first stripe member and a first end of the second stripe member have mirror surfaces and share a first common face, and a second end of the first stripe member and a second end of the second stripe member share a second common face.
15 . The method of claim 14 wherein the light emission layer has a lower energy than the barrier layer.
16 . The method of claim 14 wherein diffusing the first amount of material from the barrier layer into the first portion of the light emission layer comprises introducing a catalyst into the first portion of the light emission layer using a patterning process.
17 . The method of claim 14 wherein the QWI process includes at least one of impurity-induced disordering (IID), impurity-free vacancy-enhanced disordering (IFVD), photoabsorption-induced disordering (PAID), or implantation-enhanced interdiffusion.
18 . The method of claim 14 wherein the semipolar orientation of the gallium and nitrogen containing crystalline surface region is one of {11-22}, {10-1-1},{20-21}, {30-31},{20-2-1}, or {30-3-1}.
19 . The method of claim 14 wherein the active region further comprises an n-type cladding region overlaying the gallium and nitrogen containing crystalline surface region.
20 . The method of claim 14 further comprising forming a plurality of metal electrodes for selectively exciting the first light emission layer and the second light emission layer.