Semiconductor device including oxide current aperture

1. A semiconductor device including a light emitting diode (LED), comprising:

an N-type semiconductor layer;

an active region including aluminum indium gallium phosphide (AlInGaP) to emit red light from the LED, wherein the N-type semiconductor layer is located proximate to a first side of the active region;

a P-type semiconductor layer located proximate to a second opposite side, opposite the first side, of the active region; and

one or more oxide current apertures including a first oxide current aperture, wherein each oxide current aperture includes a non-oxidized region surrounded by an oxidized region positioned to direct current through the non-oxidized region into the AlInGaP to emit the red light.

2. The semiconductor device of claim 1 , wherein the non-oxidized region of the first oxide current aperture is at least in part in a center of the semiconductor device.

3. The semiconductor device of claim 1 , wherein the first oxide current aperture includes an aluminum containing material.

4. The semiconductor device of claim 3 , wherein the first oxide current aperture includes one of AlAs (aluminum arsenide) or Al(Ga)As (aluminum gallium arsenide).

5. The semiconductor device of claim 1 , wherein the restriction of current flow in the semiconductor device is to reduce surface recombination in the semiconductor device.

6. The semiconductor device of claim 1 , wherein the first oxide aperture is located on the N-type side of the active region.

7. The semiconductor device of claim 1 , wherein the first oxide aperture is located on the P-type side of the active region.

8. The semiconductor device of claim 1 , wherein the first oxide aperture is located on either the N-type side or P-type side of the action region, and wherein a thickness of the oxide aperture is one of:

less than 100 nm (nanometers);

less than 10 nm; or

less than 1 μm (micrometers).

9. The semiconductor device of claim 8 , wherein the first oxide aperture is located:

within 100 nm of the active region;

within 10 nm of the active region; or

within 1 μm of the active region placement.

10. The semiconductor device of claim 1 , wherein the first oxide aperture is located within the active region.

11. The semiconductor device of claim 10 , wherein the first oxide aperture is embedded by depositing large bandgap layers that may be oxidized, the large bandgap layers being interspersed with light emitting layers.

12. The semiconductor device of claim 10 , wherein a thickness of the first oxide aperture is one of:

less than 100 nm (nanometers); or

less than 10 nm.

13. The semiconductor device of claim 1 , wherein a combination of a location and a thickness of each oxide aperture are selected to optimize forward voltage, light output, light output pattern, current handling, reliability, or any combination thereof for the semiconductor device.

14. A system comprising:

a processing element; and

an LED display including a plurality of micro LED devices that emit visible light, wherein at least some of the plurality of micro LED devices include:

an N-type semiconductor layer,

a light emitting region structured to emit red light, wherein the N-type semiconductor layer is located proximate to a first side of the light emitting region,

a P-type semiconductor layer located proximate to a second side, opposite the first side, of the light emitting region, and

one or more oxide current apertures including a non-oxidized region surrounded by an oxidized region positioned to direct current through the non-oxidized region into the light emitting region to emit the red light.

15. The system of claim 14 , wherein the light emitting region includes AlInGaP disposed to receive current through the one or more oxide current apertures to emit the red light.

16. The system of claim 15 , wherein the plurality of micro LED devices is non-lasing.

17. The system of claim 16 , wherein at least some of the plurality of micro LED devices have a lateral dimension of 20 microns or less.