N-stacked field effect transistor based traveling wave power amplifier for monolithic microwave integrated circuits
View Patent ↗An apparatus includes an input port, an output port, and a plurality of amplifier stages connected in parallel between the input port and the output port. Each of the amplifier stages comprises a common source field effect transistor (CSFET) and at least two common gate field effect transistors (CGFETs) coupled in series with a drain of the common source FET. At least one of the common gate field effect transistors of each stage includes a stabilizing network connected between drain and source diffusions.
1. An apparatus comprising:
an input port;
an output port; and
a plurality of amplifier stages connected in parallel between the input port and the output port, wherein (i) each of the amplifier stages comprises a common source field effect transistor (CSFET) and at least two common gate field effect transistors (CGFETs) coupled in series with a drain of the common source FET, (ii) at least one of the common gate field effect transistors of each stage includes an integrated stabilizing network comprising a capacitor and a resistor connected in series between a drain combiner and a source pad, and (iii) the integrated stabilizing network is integrated within the at least one common gate field effect transistor.
2. The apparatus according to claim 1 , wherein:
the capacitor of said integrated stabilizing network comprises a metal-insulator-metal capacitor; and
the resistor of said integrated stabilizing network comprises a mesa resistor.
3. The apparatus according to claim 1 , wherein the plurality of amplifier stages form an N-stacked FET traveling wave amplifier (TWA), with N being an integer greater than 2.
4. The apparatus according to claim 3 , wherein the traveling wave amplifier has a bandwidth ranging from DC to about 45 GHz.
5. The apparatus according to claim 1 , wherein the plurality of amplifier stages are disposed on a monolithic microwave integrated circuit.
6. The apparatus according to claim 1 , wherein the apparatus is part of a microwave or mm-wave power amplifier.
7. The apparatus according to claim 1 , wherein the field effect transistors are implemented in at least one of gallium arsenide (GaAs), gallium nitride (GaN), indium phosphide (InP), bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), high electron mobility transistor (HEMT), and pseudomorphic high electron mobility transistor (pHEMT) technologies.
8. The apparatus according to claim 1 , wherein each of the transistors in the amplifier stage are coupled using at least one of a microstrip line and a coplanar wave guide structure.
9. The apparatus according to claim 1 , wherein the amplifier stages are coupled using at least one of a microstrip line and a coplanar wave guide structure.
10. The apparatus according to claim 1 , wherein the common source field effect transistor (CSFET) and the at least two common gate field effect transistors (CGFETs) of each stage form a cascode amplifier stage.
11. A method of amplifying a radio frequency signal comprising:
disposing a plurality of amplifier stages connected in parallel between an input port and an output port, wherein each of the amplifier stages comprises a common source field effect transistor (CSFET) and at least two common gate field effect transistors (CGFETs) coupled in series with a drain of the common source FET; and
disposing an integrated stabilizing network within a layout of at least one the common gate field effect transistors of each stage, wherein said integrated stabilizing network comprises a capacitor and a resistor connected in series between a drain combiner and a source pad of the at least one of the common gate field effect transistors of each stage.
12. The method according to claim 11 , wherein:
the capacitor of said integrated stabilizing network comprises a metal-insulator-metal capacitor; and
the resistor of said integrated stabilizing network comprises a mesa resistor.
13. The method according to claim 11 , wherein the plurality of amplifier stages form an N-stacked FET traveling wave amplifier (TWA), with N being an integer greater than 2.
14. The method according to claim 13 , wherein the traveling wave amplifier has a bandwidth ranging from DC to about 45 GHz.
15. The method according to claim 11 , wherein the plurality of amplifier stages are disposed on a monolithic microwave integrated circuit.
16. The method according to claim 11 , wherein the radio frequency signal comprises a microwave or mm-wave signal.
17. The method according to claim 11 , wherein the field effect transistors are formed using at least one of gallium arsenide (GaAs), gallium nitride (GaN), indium phosphide (InP), bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), high electron mobility transistor (HEMT), and pseudomorphic high electron mobility transistor (pHEMT) technologies.
18. The method according to claim 11 , further comprising coupling each of the transistors in the amplifier stage in series using at least one of a microstrip line and a coplanar wave guide structure.
19. The method according to claim 11 , further comprising coupling each of the amplifier stages in parallel using at least one of a microstrip line and a coplanar wave guide structure.
20. The method according to claim 11 , wherein the common source field effect transistor (CSFET) and the at least two common gate field effect transistors (CGFETs) of each stage form a cascode amplifier stage.