Method for producing a laterally structured phosphor layer and optoelectronic component comprising such a phosphor layer

1. A method for producing a laterally patterned layer, the method comprising:

providing a carrier with a first electrically conductive layer on a carrier top;

applying an insulation layer onto the first electrically conductive layer;

applying a second electrically conductive layer onto the insulation layer;

applying and patterning an etching mask onto the second electrically conductive layer;

etching the second electrically conductive layer and the insulation layer, wherein the first electrically conductive layer is retained as a continuous layer;

applying a first voltage to the first electrically conductive layer;

electrophoretically coating the first electrically conductive layer with a first material;

applying a second voltage to the second electrically conductive layer; and

electrophoretically coating the second electrically conductive layer with a second material.

2. The method according to claim 1 , wherein the laterally patterned layer is a luminescent material plate, wherein the first material is a luminescent material or a luminescent material mixture, wherein the second material contains or is a material which reflects or absorbs visible light, and wherein, after etching, the second electrically conductive layer forms a grid when viewed in plan view such that the first electrically conductive layer, when viewed in plan view, is subdivided into a plurality of regions surrounded in the manner of a frame.

3. The method according to claim 1 , wherein the first and the second materials are, in each case, deposited as particles, and wherein an average particle diameter of the particles of the second material is at least by a factor of 3 smaller than an average particle diameter of the particles of the first material.

4. The method according to claim 1 , wherein, after etching, the first and the second electrically conductive layers taken together, when viewed in plan view, completely cover the carrier top.

5. The method according to claim 1 , wherein the second electrically conductive layer and the insulation layer are selectively wet chemically etchable relative to the first electrically conductive layer.

6. The method according to claim 1 , wherein, after coating, a matrix material is placed onto the first and second materials such that the laterally patterned layer is a single, contiguous plate, and wherein the matrix material contains at least one of a silicone, a silicone/epoxy hybrid material, a polysilazane and a parylene.

7. The method according to claim 6 , wherein a third material in form of particles is added to the matrix material and the third material is a luminescent material or a luminescent material mixture.

8. The method according to claim 1 , wherein the carrier is electrically insulating.

9. The method according to claim 1 , wherein the first electrically conductive layer comprises a transparent conductive oxide and has a thickness between 50 nm and 400 nm inclusive, wherein the insulation layer is formed from a silicon oxide or a silicon nitride and has a thickness between 150 nm and 800 nm inclusive, wherein the second electrically conductive layer comprises a metallic layer with Ti, W, Al and/or Ca and has a thickness between 50 nm and 500 nm inclusive, wherein the first material is a luminescent material and has an average particle diameter of between 7 μm and 13 μm inclusive, wherein the second material has an average particle diameter of between 100 nm and 500 nm inclusive and is a titanium oxide, silicon oxide, aluminum oxide, carbon black or graphite, and wherein a thickness of a finished luminescent material plate is between 20 μm and 150 μm inclusive.

10. The method according to claim 1 , wherein the first electrically conductive layer comprises a transparent conductive oxide and has a thickness between 50 nm and 400 nm inclusive.

11. The method according to claim 1 , wherein the insulation layer is formed from a silicon oxide or a silicon nitride and has a thickness between 150 nm and 800 nm inclusive.

12. The method according to claim 1 , wherein the second electrically conductive layer comprises a metallic layer with Ti, W, Al and/or Ca and has a thickness between 50 nm and 500 nm inclusive.

13. The method according to claim 1 , wherein the first material is a luminescent material and has an average particle diameter of between 7 μm and 13 μm inclusive.

14. The method according to claim 1 , wherein the second material has an average particle diameter of between 100 nm and 500 nm inclusive and is a titanium oxide, silicon oxide, aluminum oxide, carbon black or graphite.

15. The method according to claim 1 , wherein the thickness of the finished luminescent material plate is between 20 μm and 150 μm inclusive.

16. The method according to claim 1 , wherein the method is carried out in the stated order.

17. The method according to claim 1 , further comprising, after coating with the first and the second materials, removing the carrier from the laterally patterned layer, wherein at least one of the first electrically conductive layer, the second electrically conductive layer and the insulation layer remain partially or completely on the laterally patterned layer.