Luminescent-substance mixture, light-emitting semiconductor component having a luminescent-substance mixture, and streetlamp having a luminescent-substance mixture
View Patent ↗A luminescent material mixture has a first luminescent material and a second luminescent material, wherein, under excitation with blue light, an emission spectrum of the first luminescent material has a relative intensity maximum in a yellowish-green region of the spectrum at a wavelength of greater than or equal to 540 nm and less than or equal to 560 nm and an emission spectrum of the second luminescent material has a relative intensity maximum in an orange-red region of the spectrum at a wavelength of greater than or equal to 600 nm and less than or equal to 620 nm.
1. A luminescent material mixture having a first luminescent material and a second luminescent material,
wherein under excitation with blue light, an emission spectrum of the first luminescent material has a relative intensity maximum in a yellowish-green region of the spectrum at a wavelength of greater than or equal to 540 nm and less than or equal to 560 nm and an emission spectrum of the second luminescent material has a relative intensity maximum in an orange-red region of the spectrum at a wavelength of greater than or equal to 600 nm and less than or equal to 620 nm, and
the second luminescent material is selected from (Ca,Sr,Eu)AlSiN 3 .Si 2 N 2 O or (Ca,Sr,Ba,Eu) 2 Si 5 N 8 with an Eu content of greater than or equal to 1% and less than or equal to 2.5%, with a Ba content of greater than or equal to 45% and less than or equal to 55% and with a Ca content of greater than or equal to 0% and less than or equal to 10%, wherein the Sr content is selected such that the sum of the Eu, Ba, Ca and Sr contents is 100%.
2. The luminescent material mixture according to claim 1 , wherein the first luminescent material is (Y,Lu,Ce) 3 Al 5 O 12 and (Y,Lu,Ce) 3 (Al,Ga) 5 O 12 and has a maximum excitability at a wavelength of greater than or equal to 445 nm and less than or equal to 455 nm.
3. The luminescent material mixture according to claim 1 , wherein the first luminescent material is a garnet luminescent material.
4. The luminescent material mixture according to claim 1 , wherein the first luminescent material has a relative intensity maximum at a wavelength of greater than or equal to 545 nm and less than or equal to 555 nm.
5. The luminescent material mixture according to claim 1 , wherein the first luminescent material is (Y,Lu,Gd,Ce) 3 (Al,Ga) 5 O 12 .
6. The luminescent material mixture according to claim 1 , wherein the first luminescent material is (Y,Lu,Ce) 3 Al 5 O 12 and (Y,Lu,Ce) 3 (Al,Ga) 5 O 12 and has a maximum excitability at a wavelength of greater than or equal to 440 nm and less than or equal to 460 nm.
7. The luminescent material mixture according to claim 1 , wherein the first luminescent material is (Y,Lu,Ce) 3 Al 5 O 12 with a Ce content of greater than or equal to 0.5% and less than or equal to 5% and a Y content of greater than or equal to 0% and less than or equal to 20%.
8. The luminescent material mixture according to claim 7 , wherein the Ce content is greater than or equal to 1% and less than or equal to 3% and the Y content is greater than or equal to 5% and less than or equal to 20%.
9. The luminescent material mixture according to claim 1 , wherein the second luminescent material has a relative intensity maximum at a wavelength of greater than or equal to 605 nm and less than or equal to 615 nm.
10. The luminescent material mixture according to claim 1 , wherein the first and second luminescent materials are particles.
11. The luminescent material mixture according to claim 1 , wherein the second luminescent material is (Ca,Sr,Eu)AlSiN 3 .Si 2 N 2 O and takes the form of particles with an inert coating selected from SiO 2 and Al 2 O 3 .
12. A light-emitting semiconductor device comprising a light-emitting semiconductor chip which, when in operation, emits light in a first wavelength range and the luminescent material mixture according to claim 1 , that converts at least one part of the light in the first wavelength range emitted by the light-emitting semiconductor chip into light in a second wavelength range different from the first and into light in a third wavelength range different from the first and second.
13. The light-emitting semiconductor device according to claim 12 , wherein the first wavelength range has a dominant wavelength of greater than or equal to 440 nm and less than or equal to 460 nm.
14. The light-emitting semiconductor device according to claim 13 , that emits white light composed of light of the first wavelength range and light of the second and third wavelength ranges and has a color rendering index of greater than or equal to 70 at a color temperature of greater than or equal to 3000 K and less than or equal to 6500 K.
15. A streetlamp comprising a light-emitting semiconductor device according to claim 12 .
16. The light-emitting semiconductor device according to claim 12 , wherein the first wavelength range has a dominant wavelength of greater than or equal to 445 nm and less than or equal to 455 nm.