Semiconductor device and power converter using the same
To suppress a temperature rise of a chip accompanying a production of large output by a power converter, and to reduce a size of the power converter. A power semiconductor device includes: a first power semiconductor element to configure an upper arm of an inverter circuit; a second power semiconductor element to configure a lower arm of the inverter circuit; a first lead frame to transmit power to the first power semiconductor element; a second lead frame to transmit power to the second power semiconductor element; a first gate lead frame to transmit a control signal to the first power semiconductor element; and a sealing member to seal the first power semiconductor element, the second power semiconductor element, the first lead frame, the second lead frame, and the first gate lead frame. In the power semiconductor device, a through-hole is formed in the sealing member, and a part of the first gate lead frame and a part of the second lead frame are exposed to an inner peripheral surface of the through-hole.
1. A power semiconductor device comprising:
a first power semiconductor element to configure an upper arm of an inverter circuit;
a second power semiconductor element to configure a lower arm of the inverter circuit;
a first lead frame to transmit power to the first power semiconductor element;
a second lead frame to transmit power to the second power semiconductor element;
a first gate lead frame to transmit a control signal to the first power semiconductor element; and
a sealing member to seal the first power semiconductor element, the second power semiconductor element, the first lead frame, the second lead frame, and the first gate lead frame,
wherein a through-hole is formed in the sealing member, and
a part of the first gate lead frame and a part of the second lead frame are exposed to an inner peripheral surface of the through-hole.
2. The power semiconductor device according to claim 1 , wherein
the first gate lead frame is arranged between the first lead frame and the second lead frame.
3. The power semiconductor device according to claim 1 , wherein
an exposed surface of the first gate lead frame on the inner peripheral surface of the through-hole is formed on a same plane as a cut surface forming the through-hole in the sealing member, and
an exposed surface of the second lead frame on the inner peripheral surface of the through-hole is formed on a same plane as the cut surface.
4. The power semiconductor device according to claim 1 , wherein
the first gate lead frame is formed such that an area of the exposed surface of the first gate lead frame is smaller than a cross-sectional area of the first gate lead frame inside the sealing member.
5. The power semiconductor device according to claim 1 , wherein
the first power semiconductor element is configured of a plurality of power semiconductor elements which are electrically connected in parallel, and
the first gate lead frame is formed along an arrangement direction of a plurality of the first power semiconductor elements.
6. The power semiconductor device according to claim 1 , wherein
the first power semiconductor element is configured of the plurality of power semiconductor elements which are electrically connected in parallel,
the first lead frame includes a trench having a recess shape formed on a surface of the first lead frame, and
the plurality of first power semiconductor elements are mounted to the first lead frame such that some of the first power semiconductor elements among the plurality of first power semiconductor elements are arranged on one side to sandwich the trench, and the other first power semiconductor elements among the plurality of first power semiconductor elements are arranged on another side to sandwich the trench.
7. A power converter comprising:
the power semiconductor device according to claim 1 ;
a heat dissipating member to cool the power semiconductor device; and
an insulating member,
wherein the first lead frame of the power semiconductor device is arranged such that a surface of the first lead frame, which is on an opposite side to a side on which the first power semiconductor element is arranged, is exposed from the sealing member, and
the heat dissipating member is arranged to oppose the first lead frame of the power semiconductor device with the insulating member interposed therebetween.
8. The power converter according to claim 7 , further comprising
a coolant path configured to allow coolant to flow therein,
wherein the first power semiconductor element is configured of the plurality of power semiconductor elements which are electrically connected in parallel, and
the power semiconductor element is formed such that an arrangement direction of the plurality of the first power semiconductor elements is directed along a direction in which the coolant flows.
9. The power converter according to claim 7 , further comprising
a case to accommodate the power semiconductor device,
wherein the power semiconductor device is fixed by a sealing material with which an inside of the casing is filled.
10. The power converter according to claim 9 , wherein
the through-hole of the sealing member is filled with the sealing material.