Low reflective and superhydrophobic or super water-repellent glasses and method of fabricating the same
The present invention relates to a glass having a surface with improved water-repellency or hydrophobicity and low reflectance, and a fabrication method thereof. A technology is employed, in which a thin film containing silicon or silicon oxide is formed on the glass surface, the nano-structures are formed by selective etching treatment using a reactive gas such as CF 4 or the like to provide superhydrophobicity and low reflectance properties, and a material with low surface energy is coated onto the nano-structures. The fabrication method of the low-reflective and superhydrophobic or super water-repellent glass may execute deposition and etching processes for the glass having the superhydrophobicity and the low reflectance, and provide excellent superhydrophobicity and low reflectance to the surface of the glass which was difficult to be treated. Also, the method is sustainable due to non-use of a toxic etching solution during these processes. The superhydrophobic and low-reflective glass can be applied to various fields, such as high-tech smart devices, vehicles, home appliances and so forth.
1. A method for fabricating a low-reflective and superhydrophobic or super water-repellent glass with a predetermined reflectance, water contact angle, and contact angle hysteresis, the method comprising:
a first step of preparing a thin film-deposited glass, wherein the thin film has a predetermined thickness, and comprises any one selected from the group consisting of silicon, silicon oxide and a combination thereof, and is deposited on an entire or partial surface of the glass;
a second step of fabricating an etched glass, wherein the surface of the thin film-deposited glass is selectively etched to have needle-like or pillar-like nano-protrusions with a predetermined height on the entire or partial surface thereof; and
a third step of preparing the low-reflective and superhydrophobic or super water-repellent glass by forming a hydrophobic coating layer on the surface of the etched glass with the nano-protrusions,
wherein the surface of the thin film-deposited glass is selectively etched by a plasma etching treatment using a reactive gas for a treatment time of 30 minutes to 90 minutes, and
wherein the first step comprises preparing a mixed gas of a silicon compound and a nitrogen compound and transforming the mixed gas into a plasma phase.
2. The method of claim 1 , wherein the nano-protrusions comprises needle-like or pillar-like nano-protrusions with a height of 10 nm to 500 nm.
3. The method of claim 1 , wherein the nano-protrusions have a high aspect ratio of 1 to 20.
4. The method of claim 1 , wherein the thin film in the first step is formed by at least one process selected from the group consisting of sputtering, plasma enhanced chemical vapor deposition (PECVD), e-beam evaporation, and thermal evaporation.
5. The method of claim 1 , wherein the thin film in the first step is formed with a thickness of 100 nm to 1000 nm.
6. The method of claim 1 , wherein the etching process in the second step is carried out by at least one method selected from the group consisting of plasma etching, reactive ion etching, ion-milling, and electro discharge machining (EDM).
7. The method of claim 1 , wherein the reactive gas comprises any one selected from the group consisting of CF 4 , CHF 3 , C 2 F 6 , C 2 Cl 2 F 4 , C 3 F 8 , C 4 F 8 , SF 6 and a combination thereof.
8. The method of claim 1 , wherein the plasma etching treatment is performed under a condition that a plasma acceleration voltage is in a range of −100 V to −1000 V and a plasma etching pressure is in a range of 1 Pa to 10 Pa.
9. The method of claim 1 , wherein the hydrophobic coating layer formed in the third step has a thickness of 1 nm to 100 nm.
10. The method of claim 1 , wherein the hydrophobic coating layer in the third step is a hydrocarbon-based hydrophobic thin film with a predetermined thickness comprising silicon and oxygen, or a hydrocarbon-based hydrophobic thin film comprising fluorine.
11. The method of claim 1 , wherein the hydrophobic coating layer in the third step is deposited using a plasma enhanced chemical vapor deposition (PECVD).
12. The method of claim 11 , wherein the plasma enhanced chemical vapor deposition is performed under a condition that a precursor gas comprising 0 to 30 percentage by volume (vol %) of argon gas and 70 vol % to 100 vol % of hexamethyldisiloxane (HMDSO) gas is utilized, and each R.F power supply and bias voltage is set in a range of 10 W to 200 W and −100 V to −1000 V.
13. The method of claim 1 , wherein a volume ratio of the silicon compound/the nitrogen compound is 5.5 to 48.8.
14. The method of claim 1 , wherein the silicon compound is at least one selected from the group consisting of SiH 4 and HMDSO.
15. The method of claim 1 , wherein the nitrogen compound is at least one selected from the group consisting of N 2 O and NO.
16. The method of claim 1 , wherein the surface of the thin film-deposited glass is selectively etched by a plasma etching treatment using a reactive gas for a treatment time of 60 minutes to 90 minutes.