Optoelectronic component including a reflective layer sequence and method for producing a reflective layer sequence

1. An optoelectronic component comprising:

a first layer sequence, which is designed to emit or to detect electromagnetic radiation, and

a second layer sequence, which is arranged at a first side of the first layer sequence and is designed to reflect the electromagnetic radiation emitted or to be detected by the first layer sequence, wherein the second layer sequence has a first reflector layer, a second reflector layer, a third reflector, an adhesion promoting layer, and an intermediate layer arranged between the first reflector layer and the second reflector layer and/or the second reflector layer and the third reflector layer where the intermediate layer comprises a thickness less than 10 nanometers (nm);

wherein

the first reflector layer contains a first material and is arranged at a first side of the second layer sequence facing the first side of the first layer sequence,

the adhesion promoting layer contains a second material and is arranged at a second side of the second layer sequence facing away from the first side of the first layer sequence, and

the second reflector layer contains the first material and is arranged between the first reflector layer and the adhesion promoting layer; and

the third reflector layer contains the first material.

2. The optoelectronic component as claimed in claim 1 , wherein the adhesion promoting layer forms a diffusion barrier.

3. The optoelectronic component as claimed in claim 1 .

4. The optoelectronic component as claimed in claim 1 ,

wherein the intermediate layer forms a continuous structure or a structure having local openings.

5. The optoelectronic component as claimed in claim 3 , wherein the intermediate layer contains the second material and/or a third material.

6. The optoelectronic component as claimed in claim 5 , wherein the third material is electrically conductive.

7. The optoelectronic component as claimed in claim 1 , wherein the reflector layers have at least one horizontal grain boundary region.

8. The optoelectronic component as claimed in claim 1 , wherein the adhesion promoting layer has a layer thickness in a range of between 5 and 100 nm.

9. A method comprising:

producing a layer sequence of an optoelectronic component, wherein the layer sequence has a first reflector layer containing a first material, a second reflector layer containing the first material, a third reflector layer containing the first material, an intermediate layer arranged between the first reflector layer and the second reflector layer and/or the second reflector layer and the third reflector layer where the intermediate layer comprises a thickness less than 10 nanometers (nm); and an adhesion promoting layer containing a second material, and wherein a horizontal grain boundary region is produced between the application of the first material for the first reflector layer and the application of the first material for the second reflector layer in one of the reflector layers.

10. The method as claimed in claim 9 , wherein the horizontal grain boundary region is produced by a growth pause between the application of the first reflector layer and the application of the second reflector layer.

11. The method as claimed in claim 9 , wherein the horizontal grain boundary region is produced by the application of an intermediate layer.

12. The method as claimed in claim 9 , wherein between the application of the first reflector layer and the application of the second reflector layer a part of the reflector layer already applied is removed.