Package for a tunable filter

1. A package for a tunable filter, the package comprising:

a substrate comprising a first interconnection plane;

a semiconductor device assembled on the substrate in a first component plane, the semiconductor device electrically connected to the first interconnection plane and comprising tunable passive components;

a control unit arranged in the first component plane;

a dielectric layer arranged above the first component plane;

a second component plane arranged on the dielectric layer; and

discrete passive devices arranged in the second component plane and interconnected with the semiconductor device,

wherein the tunable passive components are tunable by the control unit, and

wherein the tunable passive components, the control unit and the discrete passive devices realize the filter which is tunable in respect of a passband.

2. The package according to claim 1 , wherein the control unit is integrated into the semiconductor device together with the tunable passive components.

3. The package according to claim 1 , wherein the substrate has a lower surface, facing away from the first component plane, including external contacts, and wherein the external contacts and the tunable filter are electrically contacted by via holes and conductor tracks.

4. The package according to claim 1 , further comprising additional passive components integrated into the substrate.

5. The package according to claim 1 , further comprising further components integrated into the package and arranged in the first or second component plane, wherein the further components are selected from the group consisting of a power amplifier, an LNA, an acoustic filter, a duplexer, a diplexer and an RF semiconductor device.

6. The package according to claim 1 , wherein the tunable passive components are tunable capacitors, wherein the tunable capacitors are selected from a group consisting of varactors and switchable capacitances, and wherein the discrete passive devices are inductances.

7. The package according to claim 6 , wherein the switchable capacitances are embodied as an array of switchable MEMS capacitors or switchable MIM capacitors.

8. The package according to claim 6 , wherein the inductances are embodied as SMD components, each having a magnetic axis, wherein the SMD components are arranged linearly in such a way that magnetic axes of two of the SMD components arranged next to one another are rotated by approximately 90° with respect to one another.

9. The package according to claim 1 , further comprising a serial signal line, wherein the serial signal line has at least 4 circuit nodes, wherein each of the at least 4 circuit nodes has a parallel branch coupled to ground, and wherein a respective tunable reactance element is arranged in each parallel branch.

10. The package according to claim 9 , wherein the respective tunable reactance element is a parallel resonant circuit, wherein each parallel resonant circuit comprises a parallel connection of a tunable capacitor and an inductance.

11. The package according to claim 9 , wherein the respective tunable reactance element is a series inductance.

12. The package according to claim 9 , wherein the respective tunable reactance element is a tunable capacitance.

13. The package according to claim 9 , wherein the respective tunable reactance element is a series connection of a tunable capacitance and an inductance.

14. The package according to claim 9 , wherein the respective tunable reactance element is a series connection of an admittance inverter and a tunable capacitance.

15. The package according to claim 9 , wherein a coupling capacitance is arranged in the serial signal line between two adjacent circuit nodes of the at least 4 circuit nodes.

16. The package according to claim 15 , wherein circuit nodes of the at least four circuit nodes, which are arranged at an end on both sides of the serial signal line, are connected via a bridging inductance connected in parallel with the serial signal line.

17. The package according to claim 9 , wherein a coupling inductance is arranged in the serial signal line between two adjacent circuit nodes of the at least 4 circuit nodes.

18. The package according to claim 17 , wherein end circuit nodes of the at least 4 circuit nodes are connected by a bridging capacitance connected in parallel with the serial signal line.

19. The package according to claim 16 , wherein the coupling capacitances and the bridging inductance are integrated into the semiconductor device.

20. The package according to claim 16 , wherein the coupling capacitances and the bridging inductance are embodied as an integrated passive element (IPD) and arranged in the first component plane.

21. The package according to claim 20 , wherein the substrate or the integrated passive element is selected from a group consisting of an LTCC ceramic, an HTCC ceramic, or a laminate.