Light emitting semiconductor devices with getter layer
The invention describes a light emitting semiconductor device ( 100 ) comprising a substrate ( 120 ), a light emitting layer structure ( 155 ) and an AlGaAs getter layer ( 190 ) for reducing an impurity in the light emitting layer structure ( 155 ), the light emitting layer structure ( 155 ) comprising an active layer ( 140 ) and layers of varying Aluminum content, wherein the growth conditions of the layers of the light emitting layer structure ( 155 ) comprising Aluminum are different in comparison to the growth conditions of the AlGaAs getter layer ( 190 ). The AlGaAs getter layer ( 190 ) enables a reduction of the concentration of impurities like Sulfur etc. in the gas phase of a deposition equipment or growth reactor. The reduction of such impurities reduces the probability of incorporation of the impurities in the light emitting layer structure ( 155 ) which may affect the lifetime of the light emitting semiconductor device ( 100 ). The growth conditions are chosen out of the group Arsenic partial pressure, Oxygen partial pressure, deposition temperature, total deposition pressure and deposition rate of Aluminum. The invention further relates to a corresponding method of manufacturing such a light emitting semiconductor device ( 100 ).
1. A light emitting semiconductor device comprising:
a substrate,
a light emitting layer structure including a first impurity, and
an AlGaAs getter layer for reducing the first impurity in the light emitting layer structure, the AlGaAs getting layer including a second impurity, the light emitting layer structure comprising:
an active layer, and
layers of varying Aluminum content,
wherein a first concentration of the second impurity within the AlGaAs getter layer is at least 50% higher than a second concentration of the first impurity in the layers of the light emitting layer structure comprising Aluminum, and
wherein the AlGaAs getter layer comprises a sublayer that contains Aluminum, and an Aluminum content of the Aluminum in the sublayer varies with less than 0.5%/nm between a first Aluminum content and a second Aluminum content.
2. The light emitting semiconductor device according to claim 1 , wherein the second impurity incorporated in the AlGaAs getter layer is Sulfur.
3. The light emitting semiconductor device according to claim 1 , wherein the AlGaAs getter layer is located between the substrate and the active layer.
4. The light emitting semiconductor device according to claim 1 , wherein the AlGaAs getter layer comprises sublayers with increasing and decreasing Aluminum content.
5. The light emitting semiconductor device according to claim 1 , wherein an Aluminum content of the layers of the light emitting layer structure comprising Aluminum varies with at least 0.5%/nm.
6. The light emitting semiconductor device according to claim 1 , wherein the AlGaAs getter layer comprises a first concentration of Oxygen which is at least 50% higher than a second concentration of Oxygen in the layers of the light emitting layer structure comprising Aluminum.
7. The light emitting semiconductor device according to claim 1 , wherein the thickness of the AlGaAs getter layer is at least 50 nm.
8. The light emitting semiconductor device according to claim 1 , wherein the light emitting semiconductor device is a Vertical Cavity Surface Emitting Laser (VCSEL) comprising
a first electrode, and
a second electrode,
wherein the light emitting structure comprises:
a bottom distributed Bragg reflector (DBR),
the active layer, and
a top DBR,
wherein an Aluminum content of the AlGaAs getter layer is configured to vary at least five times slower than an Aluminum content of a layer of the bottom DBR or the top DBR is configured to vary.
9. The light emitting semiconductor device according to claim 1 , wherein the light emitting semiconductor device comprising two or more of the AlGaAs getter layer.
10. The light emitting semiconductor device according to claim 9 , wherein the two or more of the AlGaAs getter layer are adjacent to each other.
11. The light emitting semiconductor device according to claim 1 , wherein a concentration of the first or second impurity is below a defined threshold value.
12. A method of manufacturing a light emitting semiconductor device, the method comprising:
developing a light emitting layer structure using first growth conditions on a substrate; and
forming an AlGaAs getter layer for reducing a first purity in the light emitting layer structure using second growth conditions,
wherein the second growth conditions are selected such that the light emitting, layer structure includes the first impurity and the AlGaAs getter layer includes a second impurity and that a first concentration of the second impurity within the AlGaAs getter layer is at least 50% higher than a second concentration of the first impurity in the layers of the light emitting layer structure comprising Aluminum, and the first and the second growth conditions are selected from the group consisting of Arsenic partial pressure, Oxygen partial pressure, deposition temperature, total deposition pressure and deposition rate of Aluminum, and
wherein the deposition rate of Aluminum of the AlGaAs getter layer is selected such that the AlGaAs getter layer comprises a sublayer that contains Aluminum, and that an Aluminum content of the Aluminum in the sublayer varies with less than 0.5%/nm between a first Aluminum content and a second Aluminum content.
13. The method according to claim 12 , wherein an Arsenic partial pressure during deposition of the AlGaAs getter layer is varied between 2 and 200 times a Gallium partial pressure.
14. The method according to claim 12 , further forming at least a second AlGaAs getter layer for reducing impurities in the light emitting layer structure using second growth conditions.
15. The method according to claim 14 , wherein at least the second AlGaAs getter layer and the AlGaAs getter layer are adjacent to each other.
16. The method according to claim 12 , wherein adding the AlGaAs getter layer to the light emitting semiconductor device is performed after adding a dopant to a previously deposited layer.
17. The method according to claim 12 , wherein a concentration of the first or second impurity is below a defined threshold value.