Method for producing an optoelectronic device
A method for manufacturing an opto-electronic component ( 100 ) is given, comprising a provision of a carrier ( 1 ) with at least one mounting surface ( 11 ), a generation of at least two vias ( 4 ) in the carrier ( 1 ) with electrically conducting contacts ( 12, 13 ) running through the vias ( 4 ), a provision of at least one light-emitting semiconductor chip ( 2 ), wherein the semiconductor chip ( 2 ) comprises a growth substrate ( 10 ) and a layer sequence ( 7 ) epitaxially grown thereon, a mounting of the at least one semiconductor chip ( 2 ) onto the at least one mounting surface ( 11 ) of the carrier ( 1 ), wherein the semiconductor chip ( 2 ) is connected in an electrically conducting manner to the contacts ( 12, 13 ) in the same method step during the mounting onto the mounting surface ( 11 ), an isolation of the carrier ( 1 ) along isolation lines (V), wherein an isolation line (V) runs through at least one of the vias ( 4 ), so that, after the isolation, the contacts ( 12, 13 ) form contact surfaces ( 5 ) at at least one side surface ( 1 a ) of the carrier ( 1 ), wherein the side surface ( 1 a ) is perpendicular to the mounting surface ( 11 ) of the carrier ( 1 ), and a mounting of the carrier ( 1 ) with the contact surfaces ( 5 ) on a connection plate ( 8 ), wherein the mounting surface ( 11 ) is perpendicular to the connection plate ( 8 ).
1. Method for producing an optoelectronic device, comprising:
providing a carrier, with at least one mounting surface,
producing at least two through-vias in the carrier with electrically conductive contacts extending in the through-vias,
providing at least one light-emitting semiconductor chip, wherein the semiconductor chip comprises a growth substrate and a layer sequence grown epitaxially thereon,
mounting the at least one semiconductor chip to the at least one mounting surface of the carrier, wherein the semiconductor chip, on mounting to the mounting surface, is connected electrically conductively with the contacts in the same method step,
singulating the carrier along singulation lines (V), wherein a singulation line (V) runs through at least one of the through-vias, such that after singulation the contacts form contact faces on at least one side face of the carrier, wherein the side face is perpendicular to the mounting surface of the carrier, and
mounting the carrier with the contact faces on a connection board, wherein the mounting surface is perpendicular to the connection board.
2. Method for producing an optoelectronic device according to claim 1 , in which the semiconductor chip is arranged on the carrier in such a way that the growth substrate is situated on a side of the semiconductor chip remote from the carrier.
3. Method for producing an optoelectronic device according to claim 1 , in which after singulation the contact faces are situated on at least one common side face of the carrier, wherein the contact faces are electrically insulated from one another.
4. Method for producing an optoelectronic device according to claim 1 , in which the growth substrate is removed from the semiconductor chip after mounting of the semiconductor chip on the carrier.
5. Method for producing an optoelectronic device according to claim 1 , in which mounting contacts are applied to the bottom of the semiconductor chip for mounting the semiconductor chip.
6. Method for producing an optoelectronic device according to claim 5 , in which one of the mounting contacts takes the form of a contact pin, which is arranged in a recess of an another mounting contact.
7. Method for producing an optoelectronic device according to claim 1 , in which at least one ESD protection diode is integrated into the carrier.
8. Method for producing an optoelectronic device according to claim 1 , in which, after mounting on the connection board, the singulated carrier has a height perpendicularly above the connection board of 200 μm to 400 μm.
9. Method for producing an optoelectronic device according to claim 1 , in which the carrier comprises at least one cavity, within which the mounting surface is situated.
10. Method for producing an optoelectronic device according to claim 9 , in which the semiconductor chip is potted inside the cavity with a potting compound.
11. Method for producing an optoelectronic device according to claim 10 , in which the potting compound comprises TiO 2 .
12. Method for producing an optoelectronic device according to claim 1 , in which the growth substrate comprises sapphire.
13. Method for producing an optoelectronic device according to claim 1 , in which the semiconductor chip is covered with a converter element.
14. Method for producing an optoelectronic device according to claim 13 , in which the converter element is applied to the semiconductor chip by spraying.
15. Method for producing an optoelectronic device, comprising:
providing a carrier, with at least one mounting surface,
producing at least two through-vias in the carrier with electrically conductive contacts extending in the through-vias,
providing at least one light-emitting semiconductor chip, wherein the semiconductor chip comprises a growth substrate and a layer sequence grown epitaxially thereon,
mounting the at least one semiconductor chip to the at least one mounting surface of the carrier, wherein the semiconductor chip, on mounting to the mounting surface, is connected electrically conductively with the contacts in the same method step,
singulating the carrier along singulation lines (V), wherein a singulation line (V) runs through at least one of the through-vias, such that after singulation the contacts form contact faces on at least one side face of the carrier, wherein the side face is perpendicular to the mounting surface of the carrier, and
mounting the carrier with the contact faces on a connection board, wherein the mounting surface is perpendicular to the connection board, wherein after mounting on the connection board, the singulated carrier has a height perpendicularly above the connection board of 200 μm to 400 μm.